The DARPA COSMOS program: The convergence of InP and Silicon CMOS technologies for high-performance mixed-signal

Raman, Sanjay; Chang, Tsu-Hsi; Dohrman, Carl L.; Rosker, Mark J.

doi:10.1109/iciprm.2010.5516241

Cited by 27 publications

(9 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Under DARPA funding, several different approaches for integrating Si CMOS with III-V devices have been demonstrated [6]. Each approach has benefits, limitations and challenges.…”

Section: Chip-scale Heterogeneous Integration (A) Iii-v Devices and Smentioning

confidence: 99%

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

Kazior

2014

Phil. Trans. R. Soc. A.

View full text Add to dashboard Cite

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

show abstract

“…Under DARPA funding, several different approaches for integrating Si CMOS with III-V devices have been demonstrated [6]. Each approach has benefits, limitations and challenges.…”

Section: Chip-scale Heterogeneous Integration (A) Iii-v Devices and Smentioning

confidence: 99%

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

Kazior

2014

Phil. Trans. R. Soc. A.

View full text Add to dashboard Cite

show abstract

“…A suitable compromise in performance vs. cost may be eventually realized through exploitation of the work funded under the COSMOS program [10] which is striving to develop a viable high-yield process for the transistor-scale heterogeneous integration of compound semiconductor devices with standard Si CMOS. Whichever technology becomes the most practical will have to address the issue that performance of the circuitry can no longer be based on the maximum power capability of minimum NF attainable but will be based on the complexity of the circuitry available for achieving the functionality and on the total power consumed by the circuitry to perform the multiple functions.…”

Section: Mutifunction System Characteristicsmentioning

confidence: 99%

Advanced Millimeter-Wave Multifunction Systems and the Implications for Semiconductor Technology

Wallace

2011

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

View full text Add to dashboard Cite

As military combat platforms take on more challenging roles and missions, their need for advanced communications and sensors for both survivability and lethality has increased. Unfortunately the size, weight, and power (SWAP) available to accommodate these new capabilities has not grown proportionately, nor is it likely to. Many of these new capabilities are required to operate in the radio frequency (RF) spectrum as the need to operate in degraded visual environments increases and in order to reduce antenna sizes and increase available bandwidth, the millimeter-wave (MMW) portion of the spectrum is being examined to address these needs. DARPA has recently started a program in multifunction RF systems to address these needed capabilities while also addressing SWAP through the use of common apertures and exciter/receiver technology. This presentation will discuss how this need for a millimeter wave (MMW) multifunction system may influence our investment strategy in MMW components and ICs to enhance functionality and reduce cost while maintaining performance.

show abstract

“…In order to move beyond the performance of siliconbased technologies, while still providing high levels of integration and control, heterogeneous integration of III-V semiconductors and CMOS has been proposed and demonstrated for mixed-signal circuits [6], and more recently for W Band LNAs [7]. This work quantifies the performance of InP/Si BiCMOS, in comparison with other silicon technologies, for the development of W-Band down-conversion mixers.…”

Section: Introductionmentioning

confidence: 98%

“…Until recently, research has been focused on the demonstration of CMOS and SiGe BiCMOS technologies [1][2][3][4][5][6]. In order to move beyond the performance of siliconbased technologies, while still providing high levels of integration and control, heterogeneous integration of III-V semiconductors and CMOS has been proposed and demonstrated for mixed-signal circuits [6], and more recently for W Band LNAs [7].…”

Section: Introductionmentioning

confidence: 99%

An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz

McCue¹,

Casto²,

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

View full text Add to dashboard Cite

In this paper, a double-balanced Gilbert cell down-conversion mixer is demonstrated from 70-110 GHz. The wide bandwidth and high frequency are enabled by the HRL InP/Si BiCMOS process. With an f T of 300 GHz, the available 0.25 µm InP HBTs are used in the signal path while the 90nm CMOS devices are used for biasing and gain adjustment. The fully differential circuit is implemented using two on-chip Marchand baluns feeding both the LO and RF ports. An IF buffer follows the mixer to improve matching and signal quality for testing. After de-embedding the balun and IF buffer, the mixer core achieves a peak conversion gain of 13 dB, a minimum DSB NF of 10 dB, and an OP1dB of -2 dBm while consuming 5 mA from a 3.3 V supply.Index Terms -W-Band circuits, mm-wave mixer, doublebalanced mixer, Marchand balun, heterogeneous integration.

show abstract

The DARPA COSMOS program: The convergence of InP and Silicon CMOS technologies for high-performance mixed-signal

Cited by 27 publications

References 17 publications

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

Advanced Millimeter-Wave Multifunction Systems and the Implications for Semiconductor Technology

An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz

Contact Info

Product

Resources

About