The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Chen, Weiwei; Ma, Xiaohua; Hou, Bin; Zhu, Jiejie; Zhang, Jincheng; Hao, Yue

doi:10.1088/1674-1056/22/10/107303

Cited by 4 publications

(1 citation statement)

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“…SSADT has an advantage over CSADT since it allows a comparable assessment accuracy with a lower sample size [4]. Therefore, the last few decades have witnessed wide application of SSADT in reliability tests for LEDs [5], electrical connectors [6], missile tanks [7] and transistors [8]. The purpose of this study is to model the SSADT process in a more practical way, and the emphasis is to handle with various sources of variability simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear step-stress accelerated degradation modelling considering three sources of variability

Hao

Yang

Bérenguer

2018

Reliability Engineering & System Safety

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In the absence of enough run-to-failure data, step-stress accelerated degradation testing (SSADT) is often an attractive alternative way to evaluate the reliability of a product, with the advantage of requiring small sample size and short test time. However, the development of a statistical SSADT model for reliability assessment should take into account different sources of variability in the degradation process that generate uncertainty: 1) temporal variability determining the inherent variability of degradation process over time; 2) unit-to-unit variability in three aspects: degradation rates, initial degradation values, time-points of elevating stress levels; and 3) measurement errors in both covariates and degradation performance. As a contribution towards this aim, a new nonlinear Wiener-process-based SSADT model considering simultaneously nonlinearity and three sources of variability is proposed. Using the proposed SSADT model, the lifetime law of the tested product under normal conditions is derived based on the concept of first hitting time (FHT) of a predetermined failure threshold. Following an approach based on genetic algorithms (GA), a modified simulation and extrapolation method, called GA-SIMEX, is also developed for the model parameter estimation. Finally, a simulation study of fatigue crack length growth is presented to illustrate the implementation of the proposed SSADT model.

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Section: Introductionmentioning

confidence: 99%

Nonlinear step-stress accelerated degradation modelling considering three sources of variability

Hao

Yang

Bérenguer

2018

Reliability Engineering & System Safety

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Semiparametric evaluation of first‐passage distribution for step‐stress accelerated degradation tests

Palayangoda,

Ng,

2024

Appl Stoch Models Bus & Ind

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In reliability engineering, different types of accelerated degradation tests have been used to obtain reliability information for evaluating highly reliable or expensive products. The step‐stress accelerated degradation test (SSADT) is one of the useful experimental schemes that can be used to save the resources of an experiment. Motivated by the SSADT data for operational amplifiers collected in Xi'an Microelectronic Technology Institute, in which the underlying degradation mechanism of the operational amplifiers is unknown, we propose a semiparametric approach for SSADT data analysis that does not require strict distributional assumptions. Specifically, the empirical saddlepoint approximation method is proposed to estimate the items' lifetime (first‐passage time) distribution at both stress levels included and not included in the SSADT experiment. Monte Carlo simulation studies are used to evaluate the performance and illustrate the advantages of the proposed approach. Finally, the proposed semiparametric approach is applied to analyze the motivating data set.

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Lumen degradation modeling of white-light LEDs in step stress accelerated degradation test

Huang

Golubović²,

Koh

et al. 2016

Reliability Engineering & System Safety

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In this paper, lumen degradation is described by using a modified Brownian motion process for mid-power white-light LED packages, which were aged under step stress accelerated degradation test (SSADT). First, a SSADT model has been established based on the theory of equivalent accumulative damage. Then, a method was proposed to improve the accuracy of the parameter estimation by carefully modifying the estimator, which was proposed in the previous research. Experimental data show that parameters estimated by using SSADT model are very close to those estimated by using constant stress accelerated degradation test (CSADT) model, indicating the feasibility of the SSADT model. The experiment also indicates that SSADT can be used as an alternative to CSADT, as it enables comparable estimation accuracy, while using less testing time, a smaller sample size and less test capacity. Index Terms-accelerated test; Brownian motion; degradation test; light-emitting diodes; step stress; Wiener process I. INTRODUCTION ID-POWER white-light LEDs (MP-LEDs) have been widely considered as the new generation of luminaires due to their advantages of higher efficiency, longer lifetime, and more environment protections as compared to currently widely used lighting solutions (incandescence, fluorescence). Recently, due to fast evolution of the technologies, the lifetime of LED packages has been claimed to be as high as 50,000 hours. For such kind of products, failed units would be seldom observed during life tests, even though they are subjected to accelerated conditions. Therefore, it is unreasonable to collect Manuscript received

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The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Abstract: Chen Wei-Wei(陈伟伟) a)b) , Ma Xiao-Hua(马晓华) a)b) † , Hou Bin(侯斌) a)b) , Zhu Jie-Jie(祝杰杰) a)b) , Zhang Jin-Cheng(张进成) b) , and Hao Yue(郝跃) b)

Cited by 4 publications

References 17 publications

Nonlinear step-stress accelerated degradation modelling considering three sources of variability

Nonlinear step-stress accelerated degradation modelling considering three sources of variability

Semiparametric evaluation of first‐passage distribution for step‐stress accelerated degradation tests

Lumen degradation modeling of white-light LEDs in step stress accelerated degradation test

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The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Abstract: Chen Wei-Wei(陈伟伟) a)b) , Ma Xiao-Hua(马晓华) a)b) † , Hou Bin(侯 斌) a)b) , Zhu Jie-Jie(祝杰杰) a)b) , Zhang Jin-Cheng(张进成) b) , and Hao Yue(郝 跃) b)

Cited by 4 publications

References 17 publications

Nonlinear step-stress accelerated degradation modelling considering three sources of variability

Nonlinear step-stress accelerated degradation modelling considering three sources of variability

Semiparametric evaluation of first‐passage distribution for step‐stress accelerated degradation tests

Lumen degradation modeling of white-light LEDs in step stress accelerated degradation test

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Abstract: Chen Wei-Wei(陈伟伟) a)b) , Ma Xiao-Hua(马晓华) a)b) † , Hou Bin(侯斌) a)b) , Zhu Jie-Jie(祝杰杰) a)b) , Zhang Jin-Cheng(张进成) b) , and Hao Yue(郝跃) b)