The demonstration of D-SMT stressor on Si and Ge n-FinFETs

Liao, Ming-Han; Chen, P. G.; Huang, Sung-Wei; Kao, Shih-Han; Hung, Chin-Li; Liu, K. H.; Lien, Chuen‐Der; Liu, C. Y.

doi:10.1109/vlsit.2014.6894424

Cited by 5 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Other approaches to improve FET performance include the use of substrates such as Ge and III-V materials, 16,17) having much higher electron and hole mobility than Si. Although several LSI fabrication processes for Ge FinFETs have already been reported, [18][19][20][21][22][23][24][25][26][27][28] parasitic resistance reduction and more ultra-shallow junction formation remain as key challenges. This is especially true for NMOSFETs because of the low solubility and large diffusion coefficients [29][30][31] of n-type dopants in Ge.…”

Section: Introductionmentioning

confidence: 99%

Microwave plasma doping: Arsenic activation and transport in germanium and silicon

Miyoshi¹,

Oka²,

Ueda³

et al. 2016

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Microwave RLSA™ plasma doping technology has enabled conformal doping of non-planar semiconductor device structures. An important attribute of RLSA™ plasma doping is that it does not impart physical damage during processing. In this work, carrier activation measurements for AsH3 based plasma doping into silicon (Si) and germanium (Ge) using rapid thermal annealing are presented. The highest carrier concentrations are 3.6 × 1020 and 4.3 × 1018 cm−3 for Si and Ge, respectively. Secondary ion mass spectrometry depth profiles of arsenic in Ge show that intrinsic dopant diffusion for plasma doping followed by post activation anneal is much slower than for conventional ion implantation. This is indicative of an absence of defects. The comparison is based on a comparison of diffusion times at identical annealing temperatures. The absence of defects, like those generated in conventional ion implantation, in RLSA™ based doping processes makes RLSA™ doping technology useful for damage free conformal doping of topographic structures.

show abstract

Section: Introductionmentioning

confidence: 99%

Microwave plasma doping: Arsenic activation and transport in germanium and silicon

Miyoshi¹,

Oka²,

Ueda³

et al. 2016

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…However, no any device data on the Si 3-D FinFET device with an implement of the D-SMT stressor have been published so far. In this paper, we demonstrate the huge Si 3-D FinFET device performance improvement by using the D-SMT stressor, based on the understanding for the characteristics of crystal re-growth velocities along different directions on the Si substrate [8]. The stressed SiN capping film is also found that it plays an important role to change the crystal re-growth velocities along different directions and can be further used to optimize the θ to give the larger stress in the device channel region for the larger mobility booster [6], [8], [9].…”

Section: T He Dislocation-stress Memorization Technique (D-smt)mentioning

confidence: 99%

The Demonstration of Dislocation-Stress Memorization Technique Stressor on Si n-FinFETs

Liao

Chen

2015

IEEE Trans. Nanotechnology

Self Cite

View full text Add to dashboard Cite

The dislocation stress memorization technique (D-SMT) stressor is demonstrated to boost the device performance on the Si three-dimensional (3-D) FinFET device. The larger channel stress and mobility enhancement ratio are observed in the narrower gate width device, due to the effect of triple crystal re-growth directions on the 3-D FinFET device. In this paper, ∼33% mobility enhancement and ∼23% Id,sat improvement on the Si FinFET device with W/L of 100/60 nm are achieved successfully with the implement of D-SMT stressor. Index Terms-Si, FinFET, stressor, dislocation-stress memorization technique (D-SMT).

show abstract

“…Further investigation/application and the mechanism of this stress memory technology can also be found in [2]. …”

mentioning

confidence: 99%

Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036]

Liao¹,

Chen²,

Chang³

et al. 2015

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

In our original work [1], we demonstrated the usage of N-IMP in STI SiO 2 to relax the compressive stress in the n-MOSFETs and further improve the core device performance accordingly.We wish to offer an apology for the typo in the original work and want to provide the new data/finding in the erratum paper. In this paper, we demonstrate the N-IMP stress effect on the Ge n-MOSFETs (the original article has a typo for Si). The TEM image on the Ge MOSFET is also shown for reference in Fig. 2r.Further investigation/application and the mechanism of this stress memory technology can also be found in [2]. Fig. 2r. (a) AFM-Raman signal in our standard sample. (b) AFM image.(c) TEM image on our Ge MOSFETs. The real size of the CD and STI regions in the real CMOS transistor is ∼300-400 nm. Based on the wave number of Ge-Ge phonon vibration in the Raman spectra, the intrinsic compressive stress in the Ge CD with the standard STI process is about 700 MPa. REFERENCES[1] M.Additional nitrogen ion-implantation treatment in STI to relax the intrinsic compressive stress for n-MOSFETs," IEEE Trans.

show abstract

The demonstration of D-SMT stressor on Si and Ge n-FinFETs

Cited by 5 publications

References 0 publications

Microwave plasma doping: Arsenic activation and transport in germanium and silicon

Microwave plasma doping: Arsenic activation and transport in germanium and silicon

The Demonstration of Dislocation-Stress Memorization Technique Stressor on Si n-FinFETs

Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036]

Contact Info

Product

Resources

About