The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme

Abstract

In this work, the tetragonal-phase BaTiO3 high dielectric (HK) layer and the magnetic FePt metal gate (MG) film are proposed to be the gate stack scheme on the Ge three dimensional (3D) n-type multi-gate-field-effect transistors (FETs). The ∼75% dielectric constant (κ-value) improvement, ∼100× gate leakage (Jg) reduction, and ∼70% on-state current (Ion) enhancement are achieved due to the colossal magneto-capacitance effect. The magnetic field from the magnetic FePt MG film couples and triggers more dipoles in the BaTiO3 HK layer and then results in the super gate stack characteristics. The promising transistor's performance (∼200 μA/μm on the device with the gate length Lch = 60 nm) on the high mobility (Ge) material in the 3D n-type multi-gate-FETs device structure demonstrated in this work provides the useful solution for the future advanced logic device design.

Multi-Ferroic Properties on BiFeO3/BaTiO3 Multi-Layer Thin-Film Structures with the Strong Magneto-Electric Effect for the Application of Magneto-Electric Devices

“…With the growth and the recent development of magnetic sensors [1,2], magnetic electric devices [3,4], and logic Magneto-Electric Spin-Orbit (MESO) devices [5,6], a multiferroic material with a good ferroelectricity, low tunneling current (J g ), and strong magnetoelectric effect is needed urgently. In the past, we investigated the material properties of pure ferroelectric BaTiO 3 (BTO) and pure multi-ferroic BiFeO 3 (BFO) thin films separately [7,8].…”