The dependence of ultrashallow junction depths on impact dose rates

Sultan, A.; Craig, M. A.; Reddy, K. Ravindranatha; Banerjee, Sanjay K.; Ishida, E.; Maillot, Pauline; Neil, T.; Larson, L.

doi:10.1063/1.115014

Cited by 9 publications

(3 citation statements)

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“…4 A more inclusive investigation of dose rate effects was done later by Sultan et al 5 According to Moore et al, 6 activation of implanted dopants can also be improved to levels never before achieved by simply changing the dose rate without changing the dose. 4 A more inclusive investigation of dose rate effects was done later by Sultan et al 5 According to Moore et al, 6 activation of implanted dopants can also be improved to levels never before achieved by simply changing the dose rate without changing the dose.…”

Section: Introductionmentioning

confidence: 99%

High dose rate effects in silicon by plasma source ion implantation

Chun

Kim

Conrad

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inStructural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing Gcentre J.An investigation of high dose rate effects in silicon subsurface morphology has been performed. The unique capability of plasma source ion implantation to operate in the high current/low energy regime, where the near-surface structure can be effectively controlled, has been studied. At an ion energy of ϳ40 keV and an estimated dose of 1ϫ10 15 cm Ϫ2 Ar ions were implanted at various instantaneous dose rates ͑0.75-8.3 mA/cm 2 ͒ and two different pulse widths ͑25-50 s͒ into 2 in. diam silicon wafers at a constant repetition rate of 10 Hz. The irradiation damage to the wafers' structures was characterized by Rutherford backscattering spectrometry ͑RBS͒ and transmission electron microscopy ͑TEM͒. A visual observation indicated amorphization of the silicon at 0.75 mA/cm 2 , but not at 8.3 mA/cm 2 . The transition from the crystalline-to-amorphous phase was confirmed by TEM electron diffraction studies. RBS data, however, indicated there was a large discrepancy in the total dose retained between the high dose rate ͑8.3 mA/cm 2 ͒ and the low dose rate ͑0.75 mA/cm 2 ͒. Two simulation methods for the substrate temperature profile have been compared to predict the profile. A comparison of the fraction of irradiation damage from the RBS data indicated that the substrate heating effects are more dominant then the dose rate effects. Improved methods of cooling the wafer are presently being investigated.

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Section: Introductionmentioning

confidence: 99%

High dose rate effects in silicon by plasma source ion implantation

Chun

Kim

Conrad

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Small variations in the implant conditions can alter the final damage profile significantly. For example, variations in the implant wafer temperature and dose rate can create changes in the depth of the amorphous layer and evolution of the end-of-range damage [37][38][39][40][41][42]. This can have significant effects on the remaining damage in the region beyond the amorphous crystal interface.…”

Section: Current Challengesmentioning

confidence: 99%

Process modeling for future technologies

Law

2002

IBM J. Res. & Dev.

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Process modeling is an integral portion of technology computer-aided design (TCAD) and can be used to predict device structures and doping. Truly predictive process modeling has proven to be an elusive goal, because the controlling physics is complicated and difficult to investigate experimentally. The current state of process modeling is reviewed, and current and future challenges are discussed. Recent helpful trends are indicated, and problems that must be addressed are identified.

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“…1,2 But a low-energy implant induces boride-enhanced diffusion and boron uphill diffusion, 3 which have a significant impact on device performance. [14][15][16][17] Since BF 2 implant easily induces amorphization, it appears that both the chemical effects and implant-damage effects affect boron diffusion. [4][5][6][7] Fluorine is co-implanted with boron during the BF 2 molecular implants.…”

Section: Introductionmentioning

confidence: 99%

Fluorine-enhanced boron diffusion induced by fluorine postimplantation in silicon

Noda

2004

Journal of Applied Physics

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Articles you may be interested inEffect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon J. Vac. Sci. Technol. B 24, 437 (2006); 10.1116/1.2127935 Fluorine-enhanced boron diffusion in germanium-preamorphized silicon J. Appl. Phys. 98, 073521 (2005); 10.1063/1.2084336 Fluorine-enhanced boron diffusion in amorphous silicon Appl. Phys. Lett. 82, 3469 (2003); 10.1063/1.1576508 Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon

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The dependence of ultrashallow junction depths on impact dose rates

Cited by 9 publications

References 0 publications

High dose rate effects in silicon by plasma source ion implantation

High dose rate effects in silicon by plasma source ion implantation

Process modeling for future technologies

Fluorine-enhanced boron diffusion induced by fluorine postimplantation in silicon

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