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Ultrashallow junctions (∼60 nm) are obtained using low energy BF2 (5 keV) implants in crystalline Si. The variation of junction depth as a function of the dose rate is studied for doses of 1×1014 and 1×1015 cm−2. Boron diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. The residual defect density after a 950 °C, 10 s anneal for a dose of 1×1015 cm−2 is reduced for the higher dose rate as compared to the lower dose rate.

The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights (BH) of as-deposited and 200 °C annealed SBDs are 0.80 eV (I-V)/0.93 eV (C-V) and 0.87 eV (I-V)/1.03 eV (C-V). However, the BH rises to 0.99 eV (I-V)/ 1.18 eV(C-V) and then slightly deceases to 0.92 eV (I-V)/1.03 eV (C-V) after annealing at 300 °C and 400 °C. The utmost BH is attained after annealing at 300 °C and thus the optimum annealing for SBD is 300 °C. By applying Cheung's functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung's and Ψ S -V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the N SS decreases up to 300 °C annealing and then slightly increases after annealing at 400 °C. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.

We report on the electrical characteristics of Au/n-InP and Au/PVA/n-InP Schottky structures using currentvoltage (I-V) and capacitance-voltage (C-V) measurements. It has been seen that the Au/PVA/n-InP Schottky structures showed a good rectifying behavior compared to the conventional Au/n-InP Schottky structure. Calculations showed that the Schottky barrier height and ideality factor of Au/n-InP Schottky structure is 0.57 eV (I-V), 0.71 eV (C-V) and 1.45, respectively. It is observed that the Schottky barrier height value increases to 0.66 eV (I-V), 0.82 eV (C-V) and ideality factor decreases to 1.32 for Au/PVA/n-InP Schottky structure. From the above observations, it is clear that the modification of interfacial potential barrier of Au/InP are achieved using a thin PVA organic interlayer.