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We report on the electrical characteristics of Au/n-InP and Au/PVA/n-InP Schottky structures using currentvoltage (I-V) and capacitance-voltage (C-V) measurements. It has been seen that the Au/PVA/n-InP Schottky structures showed a good rectifying behavior compared to the conventional Au/n-InP Schottky structure. Calculations showed that the Schottky barrier height and ideality factor of Au/n-InP Schottky structure is 0.57 eV (I-V), 0.71 eV (C-V) and 1.45, respectively. It is observed that the Schottky barrier height value increases to 0.66 eV (I-V), 0.82 eV (C-V) and ideality factor decreases to 1.32 for Au/PVA/n-InP Schottky structure. From the above observations, it is clear that the modification of interfacial potential barrier of Au/InP are achieved using a thin PVA organic interlayer.