Effect of annealing on the electronic parameters of Au/poly(ethylmethacrylate)/n-InP Schottky diode with organic interlayer

Reddy, V. Rajagopal; Umapathi, A.; Rao, L. Dasaradha

doi:10.1016/j.cap.2013.06.001

Cited by 39 publications

(2 citation statements)

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“…So, these differences can be sourced from some parameters such as series resistance, interface states, etc. because of these parameters are responsible with downward curvature of the I-V plot [32,33].…”

Section: Resultsmentioning

confidence: 99%

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Altuntaş

Dönmez

Özgit-Akgün

et al. 2014

Journal of Alloys and Compounds

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In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed under N2 ambient at 600, 700, and 800 C to obtain β-phase. The structure and microstructure of the β-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of β-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/β-Ga2O3/p-Si metal-oxide- semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the β-Ga2O3 thin films were annealed at 800 C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (RS), ideality factor (n), zero-bias barrier height (Bo), and interface states (NSS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (ESS-EV) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (e), and RS into account. Also using the Norde function and C-V technique, e values were calculated and cross-checked. Results show that β-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and β-Ga2O3 oxide layer. © 2014 Elsevier B.V. All rights reserved

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Section: Resultsmentioning

confidence: 99%

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Altuntaş

Dönmez

Özgit-Akgün

et al. 2014

Journal of Alloys and Compounds

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“…It's widely used because of its great interest in many industrial applications and various fields, such as enhancing of electrical properties of schottky diode and conductivity of batteries 2,3 . Also, polymers systems, containing PEMA, shown use in dental applications, drug release and cartilage repair [4][5][6][7] .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of New Copolymer Based Cinnamyl Methacrylate Monomer: Determination of Monomer Reactivity Ratio and Statistical Sequence

Lerari

2015

Mat. Res.

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Radical-initiated copolymerization of Cinnamyl methacrylate (CMA) and Ethyl methacrylate (EMA) monomers were carried out at lower conversions (<10%) using 2,2'-azobisisobutyronitrile (AIBN) as initiator, in 1,4-dioxane at 60 °C and nitrogen atmosphere. Structure and composition of copolymers for wide range of monomer feed were determined by Fourier Transform Infrared (FTIR) and Ultra-violet (UV) spectroscopy analysis through recorded of analytical absorption bands for monomers units. Monomer reactivity for CMA (1)-EMA (2) pair were determined by the Finneman-Ross (F-R) and Kelen-Tudos (K-T) methods. They are r 1 = 0.135 and r 2 = 0.868 as determined by K-T method. Parameters Q 1 , e 1 of CMA monomer were calculated according to Alfrey-Price model. A relatively high activity of EMA was observed as compared to CMA growing radical. This result can be explained by sterical hindrance caused by chemical structure of cinnamyl pendant group in chain growth reactions.

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