Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode

Reddy, V. Rajagopal; Umapathi, A.; Naik, S. Sankar

doi:10.1007/s11664-013-2592-1

Cited by 12 publications

(1 citation statement)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…About 100 nm-thick PFBT was spin-coated on the clean Al electrode. Subsequently, 30 nm-thick PMMA layer was spin-coated onto the surface of PFBT [17]. Finally, about 200 nm ZnO nanoparticle film were spin-coated onto the PMMA surface.…”

Section: Methodsmentioning

confidence: 99%

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO₂ resistive memory

Chen

2018

Mater. Res. Express

View full text Add to dashboard Cite

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO 2 resistive memory To cite this article: Bo Chen et al 2018 Mater. Res. Express 5 066429 View the article online for updates and enhancements. Related content Mechanical strain effects on resistive switching of flexible polymer thin films embedded with ZnO nanoparticles Wen Sui, Chi Zhang, He-Yuan Xu et al.-Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering Zongwei Wang, Jian Kang, Zhizhen Yu et al.-Fabrication of resistive switching memory based on solution processed PMMA-HfOx blended thin films Jae-Won Lee and Won-Ju Cho

show abstract

Section: Methodsmentioning

confidence: 99%

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO₂ resistive memory

Chen

2018

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

et al. 2018

View full text Add to dashboard Cite

Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer

Reddy

Sreenu

Reddy

et al. 2016

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode

Cited by 12 publications

References 50 publications

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO₂ resistive memory

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO₂ resistive memory

Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer

Contact Info

Product

Resources

About

Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode

Cited by 12 publications

References 50 publications

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO2 resistive memory

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO2 resistive memory

Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer

Contact Info

Product

Resources

About

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO₂ resistive memory

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO₂ resistive memory