The depletion depth of high resistivity X-ray CCDs

Prigozhin, G.; Gendreau, Keith C.; Bautz, Marshall W.; Burke, Barry E.; Ricker, G.

doi:10.1109/23.682658

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…We have determined the backside voltage needed to fully deplete the 100 micron region for the TESS CCDs is approximately −20V. This was verified two ways: high energy cosmic rays produce diffusion clouds along the entire path as they travel from one surface of the detector to the opposite one through the bulk of the substrate, and show a characteristic wide plume if the device has an undepleted portion [5]. A trail that is narrow along its entire length indicates that the electric field is present everywhere, and the detector is fully depleted; an example of such a trail is shown in figure 1.…”

Section: Back Side Depletionmentioning

confidence: 77%

Reach-through effect in deep depletion TESS CCDs

Villaseñor

Prigozhin

Doty³

et al. 2017

J. Inst.

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A: TESS CCDs are backside illuminated deep depletion devices fabricated on high resistivity p-type silicon substrate and thinned down to a thickness of 100 microns. In order to fully deplete the substrate and increase the near-IR efficiency, we apply a bias voltage to the back side of the device. A bias of -20V is sufficient to fully deplete this device, but overdepletion is desirable to minimize lateral diffusion which can blur images and in turn affect the photometric precision by increasing an area (and, hence, readout and background noise) associated with a given object of interest. For this reason much larger negative bias voltages have been applied. We can achieve sharper images with larger negative substrate voltage, but we also discovered an unexpected dramatic increase of the full well capacity beyond a certain threshold voltage. A large full well above 200,000e-is accompanied by poor charge conservation once the device is in the bloomed well condition. Both phenomena can be explained by backside voltage reaching through the substrate volume in the channel stop region, eliminating the barrier for holes, and dragging the floating channel stops to a more negative potential. K: Photon detectors for UV, visible and IR photons (solid-state); Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc) 1Corresponding author.

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Section: Back Side Depletionmentioning

confidence: 77%

Reach-through effect in deep depletion TESS CCDs

Villaseñor

Prigozhin

Doty³

et al. 2017

J. Inst.

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“…For BI CCDs, both subgroup event percentage and mean PIP shift depend sensitively on energy, at low energy (E < 2 keV); however, the three subgroups of splitevent percentages and PIP shifts are insensitive to energy for E > 6 keV. This reflects the fact that, for photons with energy exceeding 6 keV, the characteristic penetration depth becomes comparable to or larger than the thickness of the ACIS BI CCD, which is only 45 m. In contrast, ACIS FI CCDs are much thicker, with larger depletion depth ($70 m; Prigozhin et al 1998a). Therefore, the branching ratios and PIP shifts depend sensitively on energy over most of the Chandra ACIS bandwidth.…”

Section: Energg Y-dependent Ser For Fi Ccdsmentioning

confidence: 79%

ChandraACIS Subpixel Event Repositioning: Further Refinements and Comparison between Backside‐ and Frontside‐illuminated X‐Ray CCDs

Kastner

Prigozhin

et al. 2004

ApJ

117

111

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We further investigate subpixel event repositioning (SER) algorithms in application to Chandra X-Ray Observatory (Chandra) CCD imaging. SER algorithms have been applied to backside-illuminated (BI) Advanced CCD Imaging Spectrometer (ACIS) devices and demonstrate spatial resolution improvements in Chandra ACIS observations. Here a new SER algorithm that is charge split-dependent is added to the SER family. We describe the application of SER algorithms to frontside-illuminated (FI) ACIS devices. The results of SER for FI CCDs are compared with those obtained from SER techniques applied to BI CCD event data. Both simulated data and Chandra ACIS observations of the Orion Nebular Cluster were used to test and evaluate the achievement of the various SER techniques.

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“…The detailed explanation of these structures is shown in Table 1. To reverse-bias the photodiode, 400 V is applied at the bottom contact of the N-type Si substrate [20]. Under such a high reverse-bias voltage, full depletion can be achieved in the Si substrate.…”

Section: Pixel Structurementioning

confidence: 99%

Design and optimization of collection efficiency and conversion gain of buried p-well SOI pixel X-ray detector

et al. 2017

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Buried P-Well (BPW) technology was used in silicon-on-insulator pixels (SOIPIX) to suppress the back-gate effect, the major challenge in SOIPIX. In this work, we have designed and optimized two novel pixel structures, which are based on different BPW design layouts, to study the carrier collection efficiency and conversion gain of the pixel unit used in SOIPIX X-ray detectors. The first structure has an extended BPW region connected with a P+ node. In the second structure, a separated BPW ring region is formed surrounding the P+ node. Two X-ray sources with different photon energies have been applied in the simulation of excess carrier generation. The results indicated that the first structure had higher collection efficiency while the second structure had a slightly better conversion gain. As a result, the total photoelectric voltage of the first structure is about two times that of the second structure, where low doping concentration (<1 × 10 16 cm -3 ) in the BPW region is preferred. Such a study of design and optimization of BPW technology is very important for applications in SOIPIX detectors.

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The depletion depth of high resistivity X-ray CCDs

Cited by 8 publications

References 6 publications

Reach-through effect in deep depletion TESS CCDs

Reach-through effect in deep depletion TESS CCDs

ChandraACIS Subpixel Event Repositioning: Further Refinements and Comparison between Backside‐ and Frontside‐illuminated X‐Ray CCDs

Design and optimization of collection efficiency and conversion gain of buried p-well SOI pixel X-ray detector

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