The design of thin-film polysilicon resistors for analog IC applications

Lane, W.A.; Wrixon, G. T.

doi:10.1109/16.22479

Cited by 64 publications

(10 citation statements)

References 11 publications

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“…This property of the polysilicon MOS gate is utilized in the tunable color photogate design. It is worth noting that the gate is a well-fabricated structure in the CMOS process, with an intra-die thickness variation on the order of 3% [30]. The resulting variation of the optical transmittance can be observed in Fig.…”

Section: A Qualitative Analysismentioning

confidence: 95%

CMOS Tunable-Wavelength Multi-Color Photogate Sensor

Noor

Krull

et al. 2013

IEEE Trans. Biomed. Circuits Syst.

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A CMOS tunable-wavelength multi-color photogate (CPG) sensor is presented. Sensing of a small set of well-separated wavelengths (e.g., > 50 nm apart) is achieved by tuning the spectral response of the device with a bias voltage. The CPG employs the polysilicon gate as an optical filter, which eliminates the need for an external color filter. A prototype has been fabricated in a standard 0.35 μm digital CMOS technology and demonstrates intensity measurements of blue (450 nm), green (520 nm), and red (620 nm) illumination with peak signal-to-noise ratios (SNRs) of 34.7 dB , 29.2 dB, and 34.8 dB, respectively. The prototype is applied to fluorescence detection of green-emitting quantum dots (gQDs) and red-emitting quantum dots (rQDs). It spectrally differentiates among multiple emission bands, effectively implementing on-chip emission filtering. The prototype demonstrates single-color measurements of gQD and rQD concentrations to a detection limit of 24 nM, and multi-color measurements of solutions containing both colors of QDs to a detection limit of 90 nM and 120 nM of gQD and rQD, respectively.

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Section: A Qualitative Analysismentioning

confidence: 95%

CMOS Tunable-Wavelength Multi-Color Photogate Sensor

Noor

Krull

et al. 2013

IEEE Trans. Biomed. Circuits Syst.

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“…Resistors can be constructed using doping implants in the mono-crystalline silicon substrate [64] (so-called n+ and p+ resistors) but also by depositing doped polysilicon [146] (n-poly and p-poly resistors). Within these construction methods, often different subcategories such as high-resistive or low-resistive polysilicon are available.…”

Section: Resistors In Standard Cmosmentioning

confidence: 99%

“…These junctions cause a small nonlinearity in the I-V transfer characteristic. In most cases, however, this is negligible [146]. Furthermore, the temperature dependency of the bulk resistance of n-poly and p-poly is opposite, which can be used to obtain a temperature-independent resistor [31].…”

Section: Resistors In Standard Cmosmentioning

confidence: 99%

Temperature- and Supply Voltage-Independent Time References for Wireless Sensor Networks

Smedt

Gielen

Dehaene

2015

Analog Circuits and Signal Processing

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“…In a contemporary submicron process, the temperature coefficients of polysilicon and all diffused resistors are usually positive, probably because mobility decreases with temperature, although dedicated highresistance polysilicon can have a negative temperature coefficient [31,32]. For off-chip components, the temperature coefficients of surface-mount thin-film chip resistors are typically less than ±200 ppm/ • C [33].…”

Section: Influence Of Temperature Dependence On Choice Of Resistancementioning

confidence: 99%

Bias Current Generators with Wide Dynamic Range

Delbrück

Schaik

2005

Analog Integr Circ Sig Process

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Mixed-signal or analog chips often require a wide range of biasing currents that are independent of process and supply voltage and that are proportional to absolute temperature. This paper describes CMOS circuits that we use to generate a set of fixed bias currents typically spanning six decades at room temperature down to a few times the transistor off-current. A bootstrapped current reference with a new startup and powercontrol mechanism generates a master current, which is successively divided by a current splitter to generate the desired reference currents. These references are nondestructively copied to form the chip's biases. Measurements of behavior, including temperature effects from 1.6 and 0.35 µ implementations, are presented and nonidealities are investigated. Temperature dependence of the transistor off-current is investigated because it determines the lower limit for generated currents. Readers are directed to a design kit that allows easy generation of the complete layout for a bias generator with a set of desired currents for scalable MOSIS CMOS processes.

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The design of thin-film polysilicon resistors for analog IC applications

Cited by 64 publications

References 11 publications

CMOS Tunable-Wavelength Multi-Color Photogate Sensor

CMOS Tunable-Wavelength Multi-Color Photogate Sensor

Temperature- and Supply Voltage-Independent Time References for Wireless Sensor Networks

Bias Current Generators with Wide Dynamic Range

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