The di-vacancy in particle-irradiated, strain-relaxed SiGe

Deep-level transient spectroscopy study of theEcenter inn−Siand partially relaxedn−Mamor1, Elzain2, Bouziane3 et al. 2008Phys. Rev. B7350View full textAdd to dashboardCite

“…Indeed, av Skardi et al 23 have shown that E H of both V 2 =/− and V 2 −/0 in MBE grown fully relaxed Si 1−x Ge x increases with increasing Ge content. This increase in E H is most likely attributed to alloying effect only.…”

Alpha-particle irradiation-induced defects in n-type germanium

“…3 of about 140°C indicates its more simple structure in comparison with the one observed by Auret et al 6 On the other hand, the relative position in the conventional DLTS spectrum could also suggest a different structure comparing this signal with the one revealed by Peaker et al 5 after Si implantation into n-type Ge. 9 Of course, this can be considered only as a guide line ͑which, however, worked well in the case of the single acceptor level of the E center in Ge 2 ͒ taking into account the different characters of the conduction bands in Si and Ge with minima at X and L points, respectively. That it is not the divacancy is indicated by the quadratic dependence of the concentration of the E290 line as a function of the irradiation dose shown in Fig.…”

Irradiation-induced defects in SiGe

“…These two lines have been followed in the lower half of the band gap, in the case of the E-center by minority-carrier transient spectroscopy (MCTS) using optical excitation (Fig. 6), and in the case of the single-acceptor signal of the di-vacancy by studying irradiationinduced defects in p-type Si 1−x Ge x [19]. The ionization enthalpy of the single-acceptor state of the E-center deduced from both DLTS and MCTS measurements as a function of Ge content is displayed in Fig.…”

“…The ionization enthalpies of the different charge states of the di-vacancy are shown in Fig. 8 [19]. For all levels the ionization Fig.…”

“…The band gap was calculated for a temperature of 250 K. From Ref. [19]. enthalpies move closer to the valence band, and for alloy fraction x larger than about 0.60 it can be anticipated that the di-vacancy will have levels only in the lower half of the band gap.…”