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The interstial-carbon (C i ) defect in molecular-beam epitaxy grown, strain relaxed n-or p-type Si 1Ϫx Ge x for 0рxр0.50 has been created by 2-MeV proton or electron irradiations, and studied by deep-level transient spectroscopy on p ϩ n-and n ϩ p-mesa diodes. The energy difference between the shallow acceptor and donor levels of the C i defect remains at a constant value of 0.8 eV as the Ge content is varied. The migration enthalpy of C i is independent of composition in the composition range 0 рxр0.15. The observed increased stability of the C i defect with increasing x is the result of a decrease in the entropy of the process.

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