Erratum: Interstitial-carbon defects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>[Phys. Rev. B<b>64</b>, 233202 (2001)]

Larsen, A. Nylandsted; Hansen, Adam; Reitze, D. H.; Goubet, J.-J.; Fage-Pedersen, Jacob; Mesli, A.

doi:10.1103/physrevb.65.209901

Cited by 4 publications

(9 citation statements)

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“…This was a challenging observation as it might reflect a retarded diffusion of C i in Si 1−x Ge x with increasing x, similar to what has been observed, but not yet satisfactorily explained, for high temperature diffusion of interstitial boron, B i , in Si 1−x Ge x for x 0.50 [4], a defect which also has an interstitialcy structure [5]. In the case of interstitial carbon, we argued [3] that a Si path constitutes the only route for C i to move.…”

Section: Introductionmentioning

confidence: 49%

“…This interpretation has been revised since then by looking at the C i annealing kinetics in more detail [3]. Quantitative information about the annealing kinetics can indeed be obtained from isothermal-annealing experiments carried out at different temperatures.…”

Section: Dynamical and Structural Propertiesmentioning

confidence: 99%

“…The C i defect, created in strain-relaxed Si 1−x Ge x layers by 2 MeV proton irradiations, has been studied by us using deep-level transient spectroscopy (DLTS). In n-and p-type Si 1−x Ge x both the (−/0)-acceptor level and the (0/+)-donor level were followed as a function of x in the range 0 x 0.50 [1][2][3]. Both the acceptor and donor levels were found to move deeper into the bandgap with increasing x, and no pinning to any of the band edges was observed for any of these levels.…”

Section: Introductionmentioning

confidence: 98%

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Interstitial-carbon-related defects in relaxed SiGe alloy: the effect of alloying

Mesli

Larsen

2005

J. Phys.: Condens. Matter

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C i and C i C s are two main defects produced via the Watkins replacement mechanism when Si-based materials containing carbon are subjected to particle irradiation. In the present article we re-examine our experimental observations reported on these defects in relaxed Si 1−x Ge x alloy layers in the light of very recent and thorough theoretical investigations (Venezuela et al 2004 Phys. Rev. B 69 115209 and Balsas et al 2004 Phys. Rev. B 70 085201). In addressing these defects two main issues are taken up. Firstly, the role of alloying upon the position of the electrical levels in the bandgap is considered: a linear shift towards the valence band with the same rate of all related levels is observed experimentally and predicted theoretically. Secondly, the dynamics of migration of interstitial carbon (C i ) in the process of forming C i C s is analysed. Our suggestion that C i migrates via Si-based paths has now found theoretical justification.

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Section: Introductionmentioning

confidence: 49%

Section: Dynamical and Structural Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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Interstitial-carbon-related defects in relaxed SiGe alloy: the effect of alloying

Mesli

Larsen

2005

J. Phys.: Condens. Matter

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“…It has previously been presented as an "Unknown" line in Ref. [13] as shown in Fig. 3, and is not observed in pure Si.…”

Section: The Mono-vacancymentioning

confidence: 83%

Irradiation-induced defects in SiGe

Larsen

Hansen

Mesli

2008

Materials Science and Engineering: B

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“…Ge and Pb in the Si lattice may act as ''scattering'' centers for the diffusing C i (refer to the case of Si 1-x Ge x , Ref. [43]) leading to a retarded diffusion of the C i and consequently to a suppression of the formation of the C i O i and the C i C s defects.…”

Section: Insights From Dft and Other Considerationsmentioning

confidence: 99%

Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

Londos

Angeletos

Sgourou

et al. 2015

J Mater Sci: Mater Electron

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Carbon and oxygen associated defects such as VO, C i O i and C i C s are common in electron irradiated silicon. Their presence can affect the material and electronic properties of Si. A way to limit their impact and understand their behavior is through doping with large isovalent dopants. The aim of the present study is to investigate and compare the effect of Ge and Pb doping on VO, C i O i and C i C s defects in electron irradiated Si mainly by using Fourier transform infrared spectroscopy in conjunction with recent density functional theory calculations. It was determined that the production of these defects is reduced by the presence of the isovalent impurity and more significantly for Pb doping as compared to Ge doping. Upon annealing the conversion to secondary defects (in particular VO to VO 2 and C i O i to C s O 2i ) is also affected by the isovalent dopants. Interestingly, the conversion ratio a VO2 /a VO is reduced with the increase of the isovalent radius, whereas the a CsO2i /a CiOi is enhanced. Theoretical calculations were used to corroborate these findings.

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Erratum: Interstitial-carbon defects inSi1−xGex[Phys. Rev. B64, 233202 (2001)]

Cited by 4 publications

References 0 publications

Interstitial-carbon-related defects in relaxed SiGe alloy: the effect of alloying

Interstitial-carbon-related defects in relaxed SiGe alloy: the effect of alloying

Irradiation-induced defects in SiGe

Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

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