Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

Londos, C. A.; Angeletos, T.; Sgourou, E. N.; Chroneos, Alexander

doi:10.1007/s10854-015-2677-0

Cited by 2 publications

(1 citation statement)

References 48 publications

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“…Additional lines at 888.9, 985.3 and 6915 cm −1 were also attributed to a less stable C i Sn s ) 2N* configuration [58]. Regarding the Ge-C and Pb-C pairs, their presence were proposed theoretically and was indirectly concluded experimentally from variations in the concentrations of the O and C-related defects [14,60,61].…”

Section: Introductionmentioning

confidence: 86%

Carbon-Isovalent Dopant Pairs in Silicon: A Density Functional Theory Study

Christopoulos,

Sgourou,

Chroneos

et al. 2024

Applied Sciences

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Carbon (C) is an important isovalent impurity in silicon (Si) that is inadvertently added in the lattice during growth. Germanium (Ge), tin (Sn), and lead (Pb) are isovalent atoms that are added in Si to improve its radiation hardness, which is important for microelectronics in space or radiation environments and near reactors or medical devices. In this work, we have employed density functional theory (DFT) calculations to study the structure and energetics of carbon substitutional-isovalent dopant substitutional CsDs (i.e., CsGes, CsSns and CsPbs) and carbon interstitial-isovalent dopant substitutional CiDs (i.e., CiGes, CiSns and CiPbs) defect pairs in Si. All these defect pairs are predicted to be bound with the larger isovalent atoms, forming stronger pairs with the carbon atoms. It is calculated that the larger the dopant, the more stable the defect pair, whereas the CsDs defects are more bound than the CiDs defects.

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Section: Introductionmentioning

confidence: 86%

Carbon-Isovalent Dopant Pairs in Silicon: A Density Functional Theory Study

Christopoulos,

Sgourou,

Chroneos

et al. 2024

Applied Sciences

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Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon

Dong

Chen

et al. 2017

Journal of Applied Physics

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The effect of germanium (Ge) doping on the formation kinetics of vacancy-dioxygen (VO2) complexes in high dose neutron irradiated crystalline silicon (c-Si) has been quantitatively investigated using infrared spectroscopy at 10 K. It is observed that Ge doping of 1019 cm−3 enhances the formation of vacancy-oxygen (VO) complexes by ∼15% during neutron irradiation and slightly suppresses the conversion of VO into VO2 complexes. By studying the generation kinetics of VO2 complexes in the temperature range of 300–345 °C, it is found that the activation energies of VO2 generation are determined to be 1.52 and 1.71 eV in the reference and Ge-doped c-Si, respectively. According to the theory for diffusion limited reactions, it is suggested that Ge doping can retard the VO diffusion in c-Si and therefore reduce the capture probability of Oi for VO complexes. This may be attributed to the temporary trapping of vacancies by Ge atoms. Hence, the formation of VO2 complexes in c-Si is slightly suppressed by Ge doping.

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Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

Cited by 2 publications

References 48 publications

Carbon-Isovalent Dopant Pairs in Silicon: A Density Functional Theory Study

Carbon-Isovalent Dopant Pairs in Silicon: A Density Functional Theory Study

Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon

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