Interstitial-carbon defects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>

Larsen, A. Nylandsted; Hansen, Adam; Reitze, D. H.; Goubel, J. J.; Fage-Pedersen, Jacob; Mesli, A.

doi:10.1103/physrevb.64.233202

Cited by 27 publications

(3 citation statements)

References 16 publications

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“…The observed decrease in the activation enthalpy is comparable to that of other point defects in n ‐type Si 1− x Ge x . Note that this decrease is not a general behavior and some defects exhibit an increase in activation enthalpy .…”

Section: Resultssupporting

confidence: 66%

Carbon‐hydrogen related defects in SiGe observed after dc H plasma treatment

Stübner

Kolkovsky

Weber

et al. 2017

Physica Status Solidi (a)

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In the present study, the electrical and structural properties of two carbon-hydrogen related DLTS levels (E42 and E262) that appear after hydrogen plasma treatment are investigated in diluted Si1−xGex alloys. E42 and E262 were previously observed in pure Si after hydrogenation by a dc hydrogen plasma. They were correlated with different charge states of a carbon–hydrogen complex, where H is located on the anti-bonding position at the carbon atom (CH1AB). By utilizing the Laplace DLTS technique we show that the DLTS peaks E42 and E262 consist of several components in Si1−xGex. These components can be quantitatively explained by the presence of Ge atoms in the first and second nearest-neighborhood of the CH1AB complex. The observed Laplace DLTS spectra indicate a preference of hydrogen to bond to carbon with a Ge atom in its first nearest-neighborhood

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Section: Resultssupporting

confidence: 66%

Carbon‐hydrogen related defects in SiGe observed after dc H plasma treatment

Stübner

Kolkovsky

Weber

et al. 2017

Physica Status Solidi (a)

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“…4, 23,24 The cause of the effect has been, however, under debate. 28,29 In this case, the observed increased stability of the interstitial-carbon defect with increasing x is proposed to result of the decrease in the entropy of migration. 28,29 In this case, the observed increased stability of the interstitial-carbon defect with increasing x is proposed to result of the decrease in the entropy of migration.…”

Section: Resultsmentioning

confidence: 86%

Diffusion of beryllium in Ge and Si–Ge alloys

Koskelo

Pusa

Räisänen

et al. 2008

Journal of Applied Physics

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Diffusion of implanted 7 Be in Si 1−x Ge x ͑x = 0.20, 0.65, 1.00͒ systems has been studied under intrinsic conditions in the temperature range of 460-720°C by the modified radiotracer technique. Arrhenius-type behavior with activation enthalpies of 2.0 eV for Ge and 2.5 eV for the Si-Ge alloys was noted. Unexpectedly, the diffusivity of beryllium is higher in the Si 0.80 Ge 0.20 material than in Si 0.35 Ge 0.65 which is discussed in terms of possible prevailing diffusion mechanisms. It is proposed that Be diffusion in Si 1−x Ge x systems is dissociative mechanism dominated for germanium rich materials and the kick-out ͑or interstitialcy͒ mechanism dominates in silicon rich materials.

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“…Density functional studies [8][9][10] demonstrated that for interstitial carbon in Si 1-x Ge x alloys split interstitial configuration is energetically favourable as well in silicon and germanium. DLTS investigations of n-and p-type Si 1-x Ge x layers has been shown that the migration of C I is retarded in Si 1-x Ge x in comparison to Si, i.e., the annealing temperature for C I increases with increasing Ge content [3,[12][13][14][15].…”

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confidence: 99%

Interstitial Carbon-Related Defects in Si<sub>1-x</sub>Ge<sub>x</sub> Alloys

Khirunenko

Pomozov

Sosnin

et al. 2007

SSP

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The interstitial carbon impurity (CI) vibrational modes in monocrystalline Si-rich SiGe were investigated by Fourier Transform Infra Red spectroscopy and density functional modelling. The two absorption bands of CI are found to be close to those in silicon, but show shifts in opposite directions with increasing Ge content. The transversal mode band at 932 cm-1 shifts slightly to the high frequency side, while the longitudinal mode at 922 cm-1 suffers a pronounced red-shift. Each Ci-related band is found to consist of two components. An annealing of CI in Si1-xGex occures in two stage. During the first stage (210-250 K) the main components of bands anneals and revealed components grow in intensity. At T>250 K all components disappear. Two component structure of bands is suppose most likely correspond to different combinations of Si and Ge atoms in the neighbourhood of the carbon atom. The interstitial carbon defect was modelled by a supercell density-functional pseudopotential method (AIMPRO) for alloys with 4.69% Ge concentration. From energetics, it has been found that each Ge-C bond costs at least 0.4 eV in excess of a Si-C bond. However, structures where Ge atoms are second neighbors to the C atom are marginally bound, and may explain the two-component band structure in the absorption measurements. The vibrational mode frequencies taken from several randomly generated SiGe cells produce the observed opposite shifts for the transverse and longitudinal modes.

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Interstitial-carbon defects inSi1−xGex

Cited by 27 publications

References 16 publications

Carbon‐hydrogen related defects in SiGe observed after dc H plasma treatment

Carbon‐hydrogen related defects in SiGe observed after dc H plasma treatment

Diffusion of beryllium in Ge and Si–Ge alloys

Interstitial Carbon-Related Defects in Si<sub>1-x</sub>Ge<sub>x</sub> Alloys

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