The Dielectric Breakdown of Anodic Aluminum Oxide

Abstract

Nonshorting breakdowns of anodic alumina films, 200-2500A thick, have been measured. These measurements reveal the existence of a thicknessindependent breakdown field which is close to the anodizing field. The existing theories, which make use of electron avalanching, cannot explain these facts and it is suggested that the breakdown is initiated by ionic movement and that it is related to the anodizing process.

Dielectric breakdown in solids

“…Bardhan et al (48) study the roles of dielectric thickness and electrodes in breakdown of A1203 films. DeWit and Crevecoeur (49) anodically grew A1203 layers 230 to DOO R in thickness using a constant current density during growth of 0.35 mA/cm 2 and a maximum field of 8.7 x 10 6 V/cm.…”

Dependence of the breakdown strength on thickness and permittivity

“…The marked lines indicate a slope of -0.5. The data taken for E max correspond to thin film data [10,11]. The permittivity for the BaTiO 3 thin film is taken from literature source [11].…”

“…4 the mean breakdown strength verses the relative permittivity ε r at 1 kHz of Al 2 O 3 and BaTiO 3 thin films and 0.3 mm thick Al 2 O 3 and BaTiO 3 samples are presented. The maximum breakdown strength E max is calculated as mean value of constant breakdown strengths from Al 2 O 3 and BaTiO 3 thin film data [10,11]. From Fig.…”

Anodised Aluminium as an Alternative Substrate for High Power Hybrid Microelectronics

“…Electrodes were also made using fired inks to give a better understanding of the insulating layer after firing. 12 Other electrical measurements were performed in connection with the Wien-bridge oscillator circuit. These were intended to check the substrate's electrical integrity and signal response.…”