The diffusion of silicon atoms in stack structures of La2O3 and Al2O3

Lee, W.J.; Ma, Jun; Bae, Jun-Hyun; Kim, C.Y.; Jeong, Kyu Shik; Cho, M.-H.; Chung, Kwun Bum; Kim, H.; Cho, H.J.; Kim, D.C.

doi:10.1016/j.cap.2012.10.001

Cited by 8 publications

(8 citation statements)

References 29 publications

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“…The intensity of the O–Al (Figure 6e,f) and Al–O (Figure 6h,i) peaks increase as the sputtering time increases. As reported in [41,42,43], the binding energy of O–Al (531.2 eV) shown in the O 1s spectra and the binding energy of Al–O (74.4 eV) shown in the Al 2p spectra were attributed to A1 2 O 3 . Moreover, the O–Al peak in Figure 6e,f and the Al–O peak in Figure 6h,i clearly indicated that there was only one peak and that no peak shifts occurred, which indicated that the Al had only one chemical state: Al 3+ .…”

Section: Resultssupporting

confidence: 65%

Fabrication of Al2O3 Nano-Structure Functional Film on a Cellulose Insulation Polymer Surface and Its Space Charge Suppression Effect

Hao

Liao

et al. 2017

Polymers

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Cellulose insulation polymer (paper/pressboard) has been widely used in high voltage direct current (HVDC) transformers. One of the most challenging issues in the insulation material used for HVDC equipment is the space charge accumulation. Effective ways to suppress the space charge injection/accumulation in insulation material is currently a popular research topic. In this study, an aluminium oxide functional film was deposited on a cellulose insulation pressboard surface using reactive radio frequency (RF) magnetron sputtering. The sputtered thin film was characterized by the scanning electron microscopy/energy dispersive spectrometer (SEM/EDS), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD). The influence of the deposited functional film on the dielectric properties and the space charge injection/accumulation behaviour was investigated. A preliminary exploration of the space charge suppression effect is discussed. SEM/EDS, XPS, and XRD results show that the nano-structured Al 2 O 3 film with amorphous phase was successfully fabricated onto the fibre surface. The cellulose insulation pressboard surface sputtered by Al 2 O 3 film has lower permittivity, conductivity, and dissipation factor values in the lower frequency (<10 3 Hz) region. The oil-impregnated sputtered pressboard presents an apparent space-charge suppression effect. Compared with the pressboard sputtered with Al 2 O 3 film for 90 min, the pressboard sputtered with Al 2 O 3 film for 60 min had a better space charge suppression effect. Ultra-small Al 2 O 3 particles (<10 nm) grew on the surface of the larger nanoparticles. The nano-structured Al 2 O 3 film sputtered on the fibre surface could act as a functional barrier layer for suppression of the charge injection and accumulation. This study offers a new perspective in favour of the application of insulation pressboard with a nano-structured function surface against space charge injection/accumulation in HVDC equipment.

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Section: Resultssupporting

confidence: 65%

Fabrication of Al2O3 Nano-Structure Functional Film on a Cellulose Insulation Polymer Surface and Its Space Charge Suppression Effect

Hao

Liao

et al. 2017

Polymers

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“…2b) La 2 O 3 films, the lanthanum and oxygen in-depth distributions in the EDX elemental ratio profiles show a parallel profile and the La/O ratio is close to 2:3 which meets well with the stoichiometry of La 2 O 3 . In the HRTEM images, an amorphous region between the Si substrate and the fabricated film, corresponding to an interfacial layer (IL) formed during the ALD growth and RTA process [24], could be found in both Fig. 2a, b.…”

Section: Resultsmentioning

confidence: 99%

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

et al. 2017

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La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

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“…The intensity of Si + in sample S4 is at least an order magnitude less than that in sample S1, which suggests that the deposited Al 2 O 3 barrier layer (15 cycles) in sample S4 indeed suppresses the diffusion of Si atoms from the Si substrate into the La 2 O 3 layer during the thermal process, in good agreement with the XPS results. Due to the formation of pinholes in the Al 2 O 3 barrier layer during the 700°C RTA treatment [18], the diffusion of Si atoms is not completely suppressed. HRTEM analysis reveals the existence of a thicker IL in the sample without an Al 2 O 3 barrier layer, and now this result can be further confirmed from the intensity of SiO 3 − signals which indicate the presence of a SiO x -like component existing in the region of the nanolaminate/substrate interface.…”

Section: Resultsmentioning

confidence: 99%

Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

et al. 2015

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In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier layer (15 atomic layer deposition (ALD) cycles, approximately 1.5 nm) plays an important role in suppressing the diffusion of silicon atoms from Si substrate into the La2O3 layer during the annealing process. As a result, some properties of La2O3 dielectric degenerated by the diffusion of Si atoms are improved. Electrical measurements (C-V, J-V) show that the thickness of Al2O3 barrier layer can affect the shift of flat band voltage (VFB) and the magnitude of gate leakage current density.

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The diffusion of silicon atoms in stack structures of La2O3 and Al2O3

Cited by 8 publications

References 29 publications

Fabrication of Al2O3 Nano-Structure Functional Film on a Cellulose Insulation Polymer Surface and Its Space Charge Suppression Effect

Fabrication of Al2O3 Nano-Structure Functional Film on a Cellulose Insulation Polymer Surface and Its Space Charge Suppression Effect

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

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