In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (ION) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’s ION and switching ratio (ION/IOFF) reach 81 μA/μm and 6.7 × 1010 at 1 V gate to source voltage (Vg). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V Vg) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V Vg) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (gm), output conductance (gds), gate to source capacitance (Cgs), gate to drain capacitance (Cgd), cut-off frequency (fT), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (Vd), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications.

In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been investigated. Compared with the undoped control sample (Cu/LaAlO 3 /Pt), the Cu-embedded devices show higher device yield and reset stop voltage, which indicates that the reliability of La-based RRAM has been effectively improved. However, the unannealed Cu/LaAlO 3 : Cu/Pt RRAM device still suffers from serious dispersion of parameters. It was proved that the RRAM device with Cu insertion layer and annealing treatment exhibits the best resistive switching characteristics such as low forming voltage, high on/off ratio and fine electrical uniformity. These improvements can be attributed to the diffusion of Cu atoms and the formation of Cu nanocrystals (Cu-NCs) after annealing process, since the diffused Cu atoms and the Cu-NCs could enhance the local electric field and weaken the randomness of the formation/rupture of conductive filaments.

No abstract

No abstract

La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.