The dislocation origin and model of excess tunnel current in GaP p-n structures

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

“…[10][11][12][13][14] Very interesting studies among these were presented by Kar et al 10 and Cao et al, 11 where the results indicated the likelihood of a primary currenttransport mechanism being multistep tunneling and defectassisted tunneling instead of TE, respectively. Evstropov et al 12,13 and Balyaev et al 14 showed that the current flow in the III-V heterojunctions is generally governed by multistep tunneling with the involvement of dislocations even at room temperature. They demonstrated that an excess tunnel current can be attributed to dislocations.…”

“…However, the slope and nT values remain almost unchanged over the same temperature range with an average of 11.35 V −1 and 1025 K, respectively. The high value of n has been attributed to several effects such as interface states, tunneling currents in the high dislocations, [12][13][14] image force lowering of the Schottky barrier in the high electric field at a MS interface, and generation currents within the spacecharge region. 18 The TFE mechanism can be ruled out in this region, since nT is more or less constant in the measured temperature range.…”

“…Similar results have been reported in the literature. [11][12][13][14][26][27][28][29] The temperature dependences of I t and E 0 are shown in By using the model equation ͑11͒ and determined I t and E 0 from the measured I-V characteristic as well as knowing V K ͑0͒, which is the expression for the DD that can be given as [12][13][14] …”

“…A model of tunneling through a space charge region along a dislocation line ͑tube͒ is suggested. 12 Analysis of the current-voltage ͑I-V͒ characteristics of the MS, MIS, and solar cells measured only at room temperature does not provide detailed information about the current-conduction process and the nature of the barrier formed at the metal/semiconductor interface. On the other hand, the forward bias I-V characteristics at a wide temperature range enable us to understand the different aspects of the current-conduction mechanism and barrier formation.…”

Influence of complex defects on electrophysical properties of GaP light emitting diodes

“…The authors of the papers [3,4] showed the possibility of appearance of the excess direct tunnel current not only in degenerate p-n-n junctions and heterostructures. It turns out that the model of "dislocation shunt", which describes interdefect tunneling of carriers in the space charge region, can be applied to the homojunction where the tunneling process occurs along the dislocation line.…”