Electrical and Optical Characterization of Ni/Al0.3Ga0.7N/GaN Schottky Barrier Diodes

Kordoš, P.; Škriniarová, J.; Chvála, Aleš; Florovic, M.; Kováč, J.; Donoval, D.

doi:10.1007/s11664-012-2184-5

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…The evaluated barrier height which appears much lower than the theoretically predicted value and large ideality factor (n ¼ 1:79) indicate that other current mechanisms besides TE mechanism contribute significantly to the gate current of present AlGaN/GaN HEMTs. The unfavorable leakage current has been ascribed to trap-assisted tunneling associated with high density of dislocations in barrier layer 18,19) or the barrier thinning induced by unintentional surface-defect donors. 20) This means the values of the barrier height and ideality factor, which are extracted by using the TE model from the total gate current, are inaccurate.…”

Section: Device Characteristicsmentioning

confidence: 99%

Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

Zhang¹,

Mi²,

Chen³

et al. 2013

Jpn. J. Appl. Phys.

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A GaN-based enhancement-mode high electron mobility transistor (HEMT) with a 1.5 nm GaN/9 nm Al0.65Ga0.35N thin barrier was reported. Without any treatment on barrier layer under the gate, the as-grown HEMTs exhibited a threshold voltage of 0.3 V, a maximum drain current density of 441 mA/mm at V GS = 3 V and a peak extrinsic transconductance of 204 mS/mm at V GS = 1.1 V. At the same time, both a low Schottky leakage current and an insignificant surface defects induced current dispersion were observed. Moreover, drain induction barrier lower (DIBL) effect was determined to be merely 3.28 mV/V at 1 mA/mm for a gate length of 0.5 µm. Additionally, post-gate annealing experiment at step temperatures up to 450 °C was implemented, only causing a minor shift in threshold voltage. These results demonstrated the substantial potential of thin and high Al composition barrier layers for high-voltage and highly reliable enhancement mode operation.

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Section: Device Characteristicsmentioning

confidence: 99%

Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

Zhang¹,

Mi²,

Chen³

et al. 2013

Jpn. J. Appl. Phys.

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“…The property of a nitride semiconductor with a heterostructure such as a cap layer or a superlattice in the vicinity of the Schottky contact has been investigated in the metal contact system. [12][13][14] The linearity of the Mott-Schottky relationship ensures the pinning of band edge energy for uniform bulk semiconductors in electrolytes, semiconductor electrode with a heterostructure such as a cap layer or a superlattice, however, is quite difficult to analyze owing to the existence of both the embedded heterostructure and the semiconductor-electrolyte interface. In order to decouple these conjugated factors, the capacitance of the semiconductor electrode with a heterostructure near the surface was investigated using both the electrolyte contact and the metal Schottky contact in this research.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Semiconductor–Electrolyte and Semiconductor–Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode

Nakamura

Sugiyama

Fujii

et al. 2013

Jpn. J. Appl. Phys.

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A semiconductor photoelectrochemical electrode that contains a heterostructure at the surface vicinity is attractive as a corrosion-tolerant electrode. In order to clarify its basic characteristics, the differences in Schottky junctions were evaluated using the semiconductor capacitance dependence on voltage. The Mott–Schottky relationship of a thin AlGaN layer on GaN was different from that of GaN bulk. The Schottky junctions were formed not only by using an electrolyte contact, but also by using a metal electrode to evaluate the effects of the semiconductor–electrolyte interface. Although diffusions of ions and solvents occur in the electrolyte, the Mott–Schottky plot measured for the electrolyte system showed a similar voltage dependence slope to that measured with a metal contact. This indicates that an electrolyte has a limited effect on the depletion behavior of the semiconductor heterojunction electrode.

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Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures

Türüt

Karabulut

Efeoǧlu

2021

J Mater Sci: Mater Electron

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Electrical and Optical Characterization of Ni/Al0.3Ga0.7N/GaN Schottky Barrier Diodes

Cited by 4 publications

References 13 publications

Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

Comparison of Semiconductor–Electrolyte and Semiconductor–Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode

Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures

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