The dissolution of metals in amorphous chalcogenides and the effects of electron and ultraviolet radiation

McHardy, C.P.; Fitzgerald, A. G.; Moir, P. A.; Flynn, M.

doi:10.1088/0022-3719/20/26/010

Cited by 33 publications

(13 citation statements)

References 28 publications

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“…Illumination of the chalcogenide/metal double layer causes metal ions to dissolve into the glass and migrate through it in the direction of illumination. Although illumination by light with photon energies comparable to the band-gap of the amorphous semiconductors has been the most efficient type of irradiation [1], ultraviolet UV light, X-rays as well as electron or ion beams have been reported to induce the metal into the matrix [2,3].…”

Section: Introductionmentioning

confidence: 99%

Ag diffusion in amorphous As50Se50 films studied by XPS

Kalyva¹,

Siokou²,

Yannopoulos³

et al. 2009

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Ag diffusion in amorphous As50Se50 films studied by XPS

Kalyva¹,

Siokou²,

Yannopoulos³

et al. 2009

Journal of Non-Crystalline Solids

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“…Before going further, it is important to point out that, even at room temperature, Cu dissolves easily in amorphous germanium chalcogenide films of micrometer thickness. 20 Therefore, it is not possible to realize a pure thin Ge 0.3 Se 0.7 film integrated non-volatile memory device with symmetrical active Cu electrodes. However, in case of dual layer memory devices, the SiO x buffer layer "with expected pin holes" (or weak links) limits the Cu dissolution in amorphous germanium chalcogenide films in abundance and, hence, makes it feasible to use symmetrical active Cu electrodes.…”

Section: Resultsmentioning

confidence: 99%

Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes

Soni

Meuffels

Petraru

et al. 2013

Journal of Applied Physics

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We report on the comparison of the resistance switching properties and kinetic behavior of Cu doped Ge0.3Se0.7 solid electrolyte based dual layer memory devices integrated with asymmetrical (Pt and Cu) and symmetrical electrodes (only Cu). In spite of the fact that the observed resistance switching properties and its parameters are quite similar for both memory devices, the dependence of the SET-voltage on the voltage sweep rate suggests different microscopic rate limiting factors for the resistance switching behavior. Additionally, in order to alleviate the cross talk problem in passive crossbar arrays, a dual layer oxide stack (TiO2/Al2O3) is integrated with Ge0.3Se0.7 based dual layer memory devices to achieve a specific degree of non-linearity in the overall resistance of the low resistance state.

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“…There are two main diffusion mechanisms, one involving fast transport via interstices and a slow one by substitution. However, Cu z + ions are highly mobile in chalcogenides and can also migrate rapidly as interstitial species until they encounter a vacancy, where substitution then occurs [52,53]. Therefore, the defects also play a role in the controlled formation and dissolution Cu filament through the solid electrolyte.…”

Section: Resultsmentioning

confidence: 99%

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

et al. 2012

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We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge0.5Se0.5/W, as compared with Al/Cu/Ge0.2Se0.8/W structures, including stable AC endurance (>105 cycles), larger average SET voltage (approximately 0.6 V), excellent data retention (>105 s) at 85°C, and a high resistance ratio (>104) with a current compliance of 8 μA and a small operation voltage of ±1.5 V. A small device size of 150 × 150 nm2 and a Cu nanofilament with a small diameter of 30 nm are both observed by high-resolution transmission electron microscope in the SET state. The GexSe1 − x solid electrolyte compositions are confirmed by both energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. The switching mechanism relies on the smaller barrier heights for holes rather than for electrons; the positively charged Cuz+ ions (i.e., holes) migrate through the defects in the GexSe1 − x solid electrolytes during SET/RESET operations. Hence, the Cu nanofilament starts to grow at the Ge0.5Se0.5/W interface, and starts to dissolve at the Cu/Ge0.5Se0.5 interface, as illustrated in the energy band diagrams. Owing to both the higher barrier for hole injection at the Cu/Ge0.5Se0.5 interface than at the Cu/Ge0.2Se0.8 interface and greater thermal stability, the resistive switching memory characteristics of the Al/Cu/Ge0.5Se0.5/W are improved relative to the Al/Cu/Ge0.2Se0.8/W devices. The Al/Cu/Ge0.5Se0.5/W memory device can also be operated with a low current compliance of 1 nA, and hence, a low SET/RESET power of 0.61 nW/6.4 pW is achieved. In addition, a large memory size of 1,300 Pbit/in2 is achieved with a small nanofilament diameter of 0.25 Å for a small current compliance of 1 nA.

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The dissolution of metals in amorphous chalcogenides and the effects of electron and ultraviolet radiation

Cited by 33 publications

References 28 publications

Ag diffusion in amorphous As50Se50 films studied by XPS

Ag diffusion in amorphous As50Se50 films studied by XPS

Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

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