The distributed thermal model of fin field effect transistor

Zubert, Mariusz; Raszkowski, Tomasz; Samson, Agnieszka; Janicki, Marcin; Napieralski, A.

doi:10.1016/j.microrel.2016.09.021

Cited by 14 publications

(12 citation statements)

References 9 publications

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“…Apart from that, an instantaneous change of a temperature gradient or a heat flux should also be emphasized as a non-physical behavior postulated by the investigated theory. None of them, especially in the case of electronic structure with physical dimensions in nanometer-scale, has been empirically confirmed [6,7]. Thus, a thermal model including improvements of the F-K approach should be used instead of the classical theory.…”

Section: State Of the Artmentioning

confidence: 99%

Investigation of Heat Diffusion at Nanoscale Based on Thermal Analysis of Real Test Structure

Raszkowski

Zubert

2020

Energies

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This paper presents an analysis related to thermal simulation of the test structure dedicated to heat-diffusion investigation at the nanoscale. The test structure consists of thin platinum resistors mounted on wafer made of silicon dioxide. A bottom part of the structure contains the silicon layer. Simulations were carried out based on the thermal simulator prepared by the authors. Simulation results were compared with real measurement outputs yielded for the mentioned test structure. The authors also propose the Grünwald–Letnikov fractional space-derivative Dual-Phase-Lag heat transfer model as a more accurate model than the classical Fourier–Kirchhoff (F–K) heat transfer model. The approximation schema of proposed model is also proposed. The accuracy and computational properties of both numerical algorithms are presented in detail.

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Section: State Of the Artmentioning

confidence: 99%

Investigation of Heat Diffusion at Nanoscale Based on Thermal Analysis of Real Test Structure

Raszkowski

Zubert

2020

Energies

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“…In order to make the analysis easier, the second order model (6) has been equivalently rewritten to the first order system and then, the reduction process based on the moment matching technique has been carried out [5]. Due to numerical problems described in [8] the Krylov subspaces have been used.…”

Section: Problem Descriptionmentioning

confidence: 99%

“…The better description of the temperature distribution can be obtained using Dual-Phase-Lag thermal model [4]. According to the research demonstrated in [3], [5], [6], the Dual-Phase-Lag model generates outputs which are more convenient and approximates temperature values more accurate than the Fourier-Kirchhoff model.…”

Section: Introductionmentioning

confidence: 99%

Comparison of two-dimensional Dual-Phase-Lag and Fourier-Kirchhoff Model order reduction using Krylov Subspace Method

2018

Bull

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This paper presents the comparison of the temperature distribution in two-dimensional nanometric structure received using two different heat transfer models. The first one is the classical approach based on Fourier-Kirchhoff model, while the second one uses the modern methodology related to Dual-Phase-Lag equation. In both cases the reduced order models have been also prepared. The reduction process was based on the Krylov subspace method. All results have been carefully analysed and discussed in this paper.

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“…It is also highly recommended to use this approach during various design-related activities. The most important of them are as follows: continuous decrease of semiconductor technology nodes, design cost reduction of microelectronic systems, and application of modern transistors in ICs (e.g., a fin field-effect transistor-FinFET [1,2], a gate-all-around field-effect transistor-GAAFET [3], and a vertical-slit field-effect transistor-VeSFET [4]).…”

Section: Introductionmentioning

confidence: 99%

Application of Scattering Parameters to DPL Time-Lag Parameter Estimation at Nanoscale in Modern Integration Circuit Structures

et al. 2021

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This paper presents the methodology of material parameters’ estimation for the dual-phase-lag (DPL) model at the nanoscale in modern integration circuit (IC) structures. The analyses and measurements performed were used in the unique dedicated micro-electro-mechanical system (MEMS) test structure. The electric and thermal domain of this structure was analysed. Finally, the silicon dioxide (SiO2) temperature time-lag estimation procedure is presented based on the scattering parameters measured by a vector network analyser for the considered MEMS structure together with the 2-omega method. The proposed methodology has the ability to estimate the time-lag parameter with high accuracy and is also suitable for the temperature time-lag estimation for other manufacturing process technologies of ICs and other insulation materials used for integrated circuits such as silicon nitride (Si3N4), titanium nitride (TiN), and hafnium dioxide (HfO2).

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The distributed thermal model of fin field effect transistor

Cited by 14 publications

References 9 publications

Investigation of Heat Diffusion at Nanoscale Based on Thermal Analysis of Real Test Structure

Investigation of Heat Diffusion at Nanoscale Based on Thermal Analysis of Real Test Structure

Comparison of two-dimensional Dual-Phase-Lag and Fourier-Kirchhoff Model order reduction using Krylov Subspace Method

Application of Scattering Parameters to DPL Time-Lag Parameter Estimation at Nanoscale in Modern Integration Circuit Structures

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