The Drive Force of Electrical Breakdown of Large‐Area Molecular Tunnel Junctions

Li, Yuan; Jiang, Li; Nijhuis, Christian A.

doi:10.1002/adfm.201801710

Cited by 37 publications

(51 citation statements)

References 85 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It provides an effective and desirable solution to predicate and control synaptic functions, which is important to backpropagation learning algorithms. 53 However, the EPSC value in the ON state is almost thirty times that in the OFF state with the same amplitude of voltage stimuli, where the ON/OFF states can reversibly switch by a corresponding pulse of V Set (0.8 V) and V Reset (−1.2 V). This means that the synaptic plasticity of the Ag/ HfO x /ITO memristive synapse can be modulated via the resistive states of devices, namely synaptic metaplasticity.…”

Section: Resultsmentioning

confidence: 98%

‘Stateful’ threshold switching for neuromorphic learning

et al. 2022

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 98%

‘Stateful’ threshold switching for neuromorphic learning

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Here, we note that some data points at high temperatures and at large applied bias suffer from noise likely because these conditions approach the breakdown voltage of our devices. [ 31 ] c) E a versus V at positive bias. The solid red line is a fit using the Marcus rates given in Equations ( 5a ) and ( 5b ).…”

Section: Resultsmentioning

confidence: 99%

Bias‐Polarity‐Dependent Direct and Inverted Marcus Charge Transport Affecting Rectification in a Redox‐Active Molecular Junction

et al. 2021

Self Cite

View full text Add to dashboard Cite

This paper describes the transition from the normal to inverted Marcus region in solid-state tunnel junctions consisting of self-assembled monolayers of benzotetrathiafulvalene (BTTF), and how this transition determines the performance of a molecular diode. Temperature-dependent normalized differential conductance analyses indicate the participation of the HOMO (highest occupied molecular orbital) at large negative bias, which follows typical thermally activated hopping behavior associated with the normal Marcus regime. In contrast, hopping involving the HOMO dominates the mechanism of charge transport at positive bias, yet it is nearly activationless indicating the junction operates in the inverted Marcus region. Thus, within the same junction it is possible to switch between Marcus and inverted Marcus regimes by changing the bias polarity. Consequently, the current only decreases with decreasing temperature at negative bias when hopping is "frozen out," but not at positive bias resulting in a 30-fold increase in the molecular rectification efficiency. These results indicate that the charge transport in the inverted Marcus region is readily accessible in junctions with redox molecules in the weak coupling regime and control over different hopping regimes can be used to improve junction performance.

show abstract

“…It has been reported before that the breakdown voltage of tunnel junctions consisting of dissimilar electrodes is not symmetrical due to the intrinsic electric field caused by the difference in the work function of the electrode materials. [66,67] We also found that our devices were not stable at large positive bias; therefore, we limited the bias window in our experiments to −2.0 to 1.0 V to prevent electrical failure. To ensure that coherent tunneling dominates the charge transport mechanism across the Al-AlO X -Cu junctions, we recorded an I(V) before the optical characterization.…”

Section: Electrical and Optical Characterization Of Tunnel Junctionsmentioning

confidence: 96%

CMOS‐Compatible Electronic–Plasmonic Transducers Based on Plasmonic Tunnel Junctions and Schottky Diodes

Wang

Liu

Hoang

et al. 2021

Small

Self Cite

View full text Add to dashboard Cite

plasmonic metals, such as Au and Ag, that are not CMOS compatible. [8] Here, we report an all-electrical, CMOS-compatible electronic-plasmonic transducer based on an Al-AlO X -Cu tunnel junction as the plasmon source, a Si-Cu Schottky diode as the plasmon detector, both connected by a Cu plasmonic strip waveguide. These electronic-plasmonic transducers do not require bulky off-chip components and are useful for future on-chip applications where it is vital to interface plasmonics with microelectronics. [1,9] Often, SPPs are excited by optical means, which requires momentummatching elements such as gratings or prisms. [10] One approach to realize on-chip excitation of SPPs is to miniaturize the light sources where first an electrical signal is converted to photons which then couple to SPPs. [3,11,12] In this context of miniaturization, metalinsulator-metal tunnel junctions (MIM-TJs) are interesting because they can be used as electrically driven plasmon sources where SPPs are directly excited via inelastic tunneling of electrons. [13][14][15] The potential of such plasmonic tunnel junctions has been explored in terms of two-photon emission, [16] above threshold emission (where the emitted photons have higher energy than the applied bias), [17,18] and nonlinear effects [19] have been demonstrated. It is also possible To develop methods to generate, manipulate, and detect plasmonic signals by electrical means with complementary metal-oxide-semiconductor (CMOS)-compatible materials is essential to realize on-chip electronicplasmonic transduction. Here, electrically driven, CMOS-compatible electronic-plasmonic transducers with Al-AlO X -Cu tunnel junctions as the excitation source of surface plasmon polaritons (SPPs) and Si-Cu Schottky diodes as the detector of SPPs, connected via plasmonic strip waveguides of Cu, are demonstrated. Remarkably, the electronic-plasmonic transducers exhibit overall transduction efficiency of 1.85 ± 0.03%, five times higher than previously reported transducers with two tunnel junctions (metal-insulatormetal (MIM)-MIM transducers) where SPPs are detected based on optical rectification. The result establishes a new platform to convert electronic signals to plasmonic signals via electrical means, paving the way toward CMOS-compatible plasmonic components.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/smll.202105684.

show abstract

The Drive Force of Electrical Breakdown of Large‐Area Molecular Tunnel Junctions

Cited by 37 publications

References 85 publications

‘Stateful’ threshold switching for neuromorphic learning

‘Stateful’ threshold switching for neuromorphic learning

Bias‐Polarity‐Dependent Direct and Inverted Marcus Charge Transport Affecting Rectification in a Redox‐Active Molecular Junction

CMOS‐Compatible Electronic–Plasmonic Transducers Based on Plasmonic Tunnel Junctions and Schottky Diodes

Contact Info

Product

Resources

About