The dual role of multiple-transistor charge sharing collection in single-event transients

Guo, Yang; Chen, Jianjun; He, Yuhui; Liang, Bin; Liu, Biwei

doi:10.1088/1674-1056/22/4/046103

Cited by 7 publications

(3 citation statements)

References 18 publications

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“…Extensive works on SET pulse quenching have been done in digital circuits [3][4][5][6][7][8]. In digital designs, the charge collected by passive device should be maximized in order to minimize the propagated SET.…”

Section: Introductionmentioning

confidence: 99%

Pulse quenching based radiation-hardened by design technique for analog single-event transient mitigation on an operational amplifier in 28 nm bulk CMOS process

Liu

Sun

et al. 2020

Semicond. Sci. Technol.

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In nanometer bulk CMOS processes, multi-node charge collection induced by a heavy-ion strike is prevalent. Pulse quenching caused by charge sharing between the struck node (termed as active device) and the following gate (termed as passive device) has been widely studied in digital circuits. This paper firstly demonstrates that the pulse quenching effect also exists between the adjacent stages of analog circuits and can be used to mitigate analog single-event transient (ASET) perturbation. Contrary to digital circuits, whose propagated SET is minimized with the charge collected by passive device maximized, simulation results indicate that there is an optimal spacing between the active and passive devices in analog circuits. When the spacing is too close, the SET induced by the hit node is efficiently mitigated by pulse quenching effect, but the disturbance caused by the charge sharing collection in passive device becomes dominant. Simulation results show that pulse quenching effect has a dual role in ASET mitigation. This paper provides innovative guidance to the radiation-hardening design for analog circuits.

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Section: Introductionmentioning

confidence: 99%

Pulse quenching based radiation-hardened by design technique for analog single-event transient mitigation on an operational amplifier in 28 nm bulk CMOS process

Liu

Sun

et al. 2020

Semicond. Sci. Technol.

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“…Therefore, the lightly doped substrate is suitable for using in the circuit that is sensitive to SET. [23][24][25] But in the circuit which is susceptible to charge collection, the doping concentration of substrate could be appropriately increased. 8(b), when the collector doping concentration differs by two orders of magnitude, the current hardly change for emitter, base, and substrate.…”

Section: Resultsmentioning

confidence: 99%

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Zhang¹,

He²,

Guo³

et al. 2017

Chinese Phys. B

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The fabrication process dependent effects on single event effects (SEEs) are investigated in a commercial silicongermanium heterojunction bipolar transistor (SiGe HBT) using three-dimensional (3D) TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.

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“…At the same time, as the process node advances, the density of devices increases. This increase in density brings about problems such as the charge sharing effect, the micro-dose rate effect, and the multi-bit flipping effect [6][7][8][9][10]. As a result, both local and international researchers have concentrated on the problem of irradiation reliability in advanced nodes.…”

Section: Introductionmentioning

confidence: 99%

A New Type of Si-Based MOSFET for Radiation Reinforcement

Liu,

Zhou,

Zhang

et al. 2024

Micromachines

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This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/μm and 1 pC/μm Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source.

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The dual role of multiple-transistor charge sharing collection in single-event transients

Cited by 7 publications

References 18 publications

Pulse quenching based radiation-hardened by design technique for analog single-event transient mitigation on an operational amplifier in 28 nm bulk CMOS process

Pulse quenching based radiation-hardened by design technique for analog single-event transient mitigation on an operational amplifier in 28 nm bulk CMOS process

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

A New Type of Si-Based MOSFET for Radiation Reinforcement

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