Amorphous
semiconductors with tailored ionic and electronic conductivities
are central to the operation of emerging resistive memory. However,
because of the large amount of potential candidates and compositions,
only limited numbers of materials have been tested experimentally.
To accelerate the search of efficient solid electrolytes for resistive
switching devices, we developed parameters to describe copper-doped
germanium sulfides based on ReaxFF, a reactive molecular dynamics
framework. The force field was optimized against a training set of
first-principle calculations including crystals, amorphous structures,
some small molecules, and clusters to describe the atomic interactions
among Ge, S, and Cu elements. Based on this novel atomistic model,
we studied the mobility of Cu as a function of the ternary composition
of amorphous Ge
x
S
y
Cu
z
, and we investigated the corresponding
atomic and electronic structures of each solid electrolyte in details.
Our analysis led to semiconducting compositions with high Cu mobility
and favoring the formation of Cu clusters. Molecular dynamics simulations
of switching under an external potential show that devices based on
electrolytes with high Cu mobility form thick metallic filaments,
and an amorphous copper sulfide phase was observed at the interface.
Such an atomistic model is critical to improve our understanding of
the atomic mechanism of filamentary growth and can be used to improve
retention and endurance of resistive switching devices, which are
still limiting their widespread commercial use.