Nanoscale resistance-switching cells that operate via the electrochemical formation and disruption of metallic filaments that bridge two electrodes are among the most promising devices for post-CMOS electronics. Despite their importance, the mechanisms that govern their remarkable properties are not fully understood, especially for nanoscale devices operating at ultrafast rates, limiting our ability to assess the ultimate performance and scalability of this technology. We present the first atomistic simulations of the operation of conductive bridging cells using reactive molecular dynamics with a charge equilibration method extended to describe electrochemical reactions. The simulations predict the ultrafast switching observed in these devices, with timescales ranging from hundreds of picoseconds to a few nanoseconds for devices consisting of Cu active electrodes and amorphous silica dielectrics and with dimensions corresponding to their scaling limit (cross-sections below 10 nm). We find that single-atom-chain bridges often form during device operation but that they are metastable, with lifetimes below a nanosecond. The formation of stable filaments involves the aggregation of ions into small metallic clusters, followed by a progressive chemical reduction as they become connected to the cathode. Contrary to observations in larger cells, the nanoscale conductive bridges often lack crystalline order. An atomic-level mechanistic understanding of the switching process provides guidelines for materials optimization for such applications and the quantitative predictions over an ensemble of devices provide insight into their ultimate scaling and performance.

We characterize the electronic structure and elasticity of monolayer transitionmetal dichalcogenides MX 2 (M=Mo, W, Sn, Hf and X=S, Se, Te) with 2H and 1T structures using fully relativistic first principles calculations based on density functional theory. We focus on the role of strain on the band structure and band alignment across the series 2D materials. We find that strain has a significant effect on the band gap; a biaxial strain of 1% decreases the band gap in the 2H structures, by as a much 0.2 eV in MoS 2 and WS 2 , while increasing it for the 1T materials. These results indicate that strain is a powerful avenue to modulate their properties; for example, strain enables the formation of, otherwise impossible, broken gap heterostructures within the 2H class. These calculations provide insight and quantitative information for the rational development of heterostructures based on these class of materials accounting for the effect of strain.

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse are we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states indicating the possibility of both p-(early TMs) and n-(mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggets that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.where E(nM X 2 + D I ) is the energy of the TMD sample with n formula units including an interstitial dopant. We note that the formation energy for an adsorbed atom is defined following Eq. 2 as well. It is clear from Eqs. 1 and 2 that the formation energies depend on the chemical potential of the species involved, which are determined by growth conditions. The chemical potentials for the metal and chalcogen atoms are typically considered between two limits: metal rich and chalcogen rich. Under metal-rich conditions {µ M −rich M ,µ M −rich X }, the chemical potential of the metal is set by its ground state crystal structure and that for the chalcogen is set such that the TMD is in equilibrium with the metal source.In chalcogen-rich conditions {µ X−rich M ,µ X−rich X }, the chemical potential of the chalcogen is obtained from

As the challenges in continued scaling of the integrated circuit technology escalate every generation, there is an urgent need to find viable solutions for both the front-end-of-line (transistors) and the back-end-of-line (interconnects). For the interconnect technology, it is crucial to replace the conventional barrier and liner with much thinner alternatives so that the current driving capability of the interconnects can be maintained or even improved. Due to the inherent atomically thin body thicknesses, 2D materials have recently been proposed and explored as Cu diffusion barrier alternatives. In this Perspective article, a variety of 2D materials that have been studied, ranging from graphene, h-BN, MoS2, WSe2 to TaS2, will be reviewed. Their potentials will be evaluated based on several criteria, including fundamental material properties as well as the feasibility for technology integration. Using TaS2 as an example, we demonstrate a large set of promising properties and point out that there remain challenges in the integration aspects with a few possible solutions waiting for validation. Applications of 2D materials for other functions in Cu interconnects and for different metal types will also be introduced, including electromigration, cobalt interconnects, and radio-frequency transmission lines.

The efficiency of the vinylene moiety as a linker to intercommunicate the subporphyrazine (SubPz) core with other chromophores and redox active systems has been examined. In addition, different substitution patterns for hexaarylated SubPzs have been explored in order to control the absorption, fluorescence, and redox properties independently of one another. Besides X-ray crystallography, complete spectroscopic and electrochemical characterizations have been performed, and the conclusions have been supported by density functional theory calculations. The absorption and emission profiles, as well as the organization of the macrocycles in the crystalline state, are strongly determined by the substitution pattern. Within the hexaarylated family, para-substitution with electron-rich moieties (i.e., phenylene or ether) red-shifts both the SubPz absorption and emission bands. Progressive fading of these effects upon extending the oligophenylene branches from one to three units evidences the less efficient electronic delocalization over the phenyl ends as the oligophenylene branch is enlarged. Contrasting, meta-substitution produces little variation or blue shift of the SubPz Q-band, while bathochromic shifts are always observed for the emission bands. In hexavinylene-SubPzs, peripheral vinylene moieties adopt a coplanar configuration with the aromatic SubPz core, resulting in a π-extended chromophore that preserves the unique electronic tunability of SubPzs. This is reflected by the strong alteration of the SubPz electronic properties produced by phenyl and biphenyl moieties attached to the vinylene ends.