The effect of a metal
            <scp>PGS</scp>
            on the
            <i>Q</i>
            ‐factor of spiral inductors for
            <scp>RF</scp>
            and mm‐wave applications in a 28‐nm
            <scp>CMOS</scp>
            technology

Spataro, Simone; Papotto, Giuseppe; Ragonese, Egidio

doi:10.1002/mmce.22368

Cited by 11 publications

(3 citation statements)

References 26 publications

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“…A patterned ground shield (PGS) performed with the lowest metal layer (M1) could also be included beneath the inductor area, as shown in Figure 3b. However, substrate shielding in this technology is not effective since it increases substrate losses and reduces the self-resonant frequency (SRF) [34].…”

Section: Overview Of 28 Nm Fd-soi Technologymentioning

confidence: 99%

CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications

Papotto,

Parisi,

Finocchiaro

et al. 2024

Electronics

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This paper presents recent results on CMOS integrated circuits for automotive radar sensor applications in the 77 GHz frequency band. It is well demonstrated that nano-scale CMOS technologies are the best solution for the implementation of low-cost and high-performance mm-wave radar sensors since they provide high integration level besides supporting high-speed digital processing. The present work is mainly focused on the RF front-end and summarizes the most stringent requirements of both short/medium- and long-range radar applications. After a brief introduction of the adopted technology, the paper addresses the critical building blocks of the receiver and transmitter chain while discussing crucial design aspects to meet the final performance. Specifically, effective circuit topologies are presented, which concern mixer, variable-gain amplifier, and filter for the receiver, as well as frequency doubler and power amplifier for the transmitter. Moreover, a voltage-controlled oscillator for a PLL efficiently covering the two radar bands is described. Finally, the circuit description is accompanied by experimental results of an integrated implementation in a 28 nm fully depleted silicon-on-insulator CMOS technology.

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Section: Overview Of 28 Nm Fd-soi Technologymentioning

confidence: 99%

CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications

Papotto,

Parisi,

Finocchiaro

et al. 2024

Electronics

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“…The novel interstacked four-port transformer implementation is shown in Figure 4a. No patterned ground shield (PGS) was implemented to improve the self-resonance frequency (SRF) [33,34]. To better understand the geometry of the transformer, Figure 4b depicts the single coil which the whole structure is composed of.…”

Section: Design Of An Interstacked Four-port Transformermentioning

confidence: 99%

Interstacked Transformer Quad-Core VCOs

Tripoli,

Maiellaro,

Pavone

et al. 2024

Electronics

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This paper presents for the first time a quad-core oscillator based on a very compact interstacked transformer that tightly couples the four cores without oscillation mode ambiguity thanks to its strong magnetic coupling factor. As a proof of concept, a 19.125 GHz oscillator for a narrowband 77 GHz radar system was designed in 28 nm fully depleted silicon-on-insulator CMOS technology with a general purpose back-end-of-line. The soundness of the proposed quad-core oscillator topology is demonstrated by comparison with state-of-the-art quad-core solutions, highlighting a significant advantage in terms of area occupation and power consumption. The proposed topology can be profitably exploited in several RF/mm-wave applications, such as radar and wireless communication systems.

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“…These extra losses degrade the Q-factor of planar inductors and of unshielded transmission lines, such as coplanar waveguide (CPW) and coplanar stripline (CPS), and planar inductors. The use of patterned ground shields underneath inductors does help mitigate the substrate eddy current losses, but in higher frequencies the ohmic losses from the shield degrades the Q-factor of the inductors, as indicated in [59].…”

Section: Slow-wave Coplanar Striplines (S-cps)mentioning

confidence: 99%

Design of phase shifters in nanowire membrane technology and VCOs in CMOS technology at millimeter-waves for future full frontend integration.

Gomes¹

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Autorizo a reprodução e divulgação total ou parcial deste trabalho, por qualquer meio convencional ou eletrônico, para fins de estudo e pesquisa, desde que citada a fonte. Catalogação-na-publicação ACNKOWLEDGMENTSWriting a doctoral thesis in the middle of a pandemic isn't a pleasant endeavor in any way, so I would like to express my wholehearted gratitude to everyone that helped me along the way, be it in the form of academic/technical or emotional support.To my advisors and professors, Ariana, Philippe, Gustavo, Sylvain and Florence, for the guidance and help while conducting my work, both in Brazil and in France.To the technicians at LME-USP, Thereza, Cristina, Rita, Alexandre and Igor for all the help with the fabrication processes I did. Also, to Loïc for the help during the measurement campaigns of my circuits.To my wife, Karol. Your presence and love gave me the strength I needed to carry on my work.To my parents, Wilson and Lígia, that gave me the support I needed to carry my studies.To the friends I made along the way, Júlio, Marc, Renato, Tadeu and Mohammed. You helped me so much along the way, both technically and personally.And finally, I would like to thank the Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) for funding my doctoral studies, both in Brazil and during my stay in France.Toutes les générations de VCOs ont été conçues en bande E autour de 80 GHz, avec un objectif d'accord en fréquence au minimum de 10%. La figure de mérite de l'ensemble des générations est meilleure que -170 dB.La dernière génération basée sur des résonnateurs commutés permet d'envisager un accord de l'ordre de 20% permettant de couvrir la totalité de la bande E. L'ensemble des résultats obtenus montre ainsi que l'approche utilisant des résonateurs basés sur des lignes à ondes lentes de type CPS offre un fort potentiel, que ce soit en termes de performances ou de flexibilité de design permettant d'obtenir des résonateurs très compacts en bande millimétrique.Remarquons que cela peut paraître paradoxal de vouloir fournir des efforts en termes de miniaturisation en bande E où la longueur des lignes devient modérée, mais ce serait oublier le coût des technologies qui croît de manière exponentielle avec la performance des actifs et des passifs, nécessitant ainsi des efforts importants en termes de miniaturisation.

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The effect of a metal PGS on the Q ‐factor of spiral inductors for RF and mm‐wave applications in a 28‐nm CMOS technology

Cited by 11 publications

References 26 publications

CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications

CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications

Interstacked Transformer Quad-Core VCOs

Design of phase shifters in nanowire membrane technology and VCOs in CMOS technology at millimeter-waves for future full frontend integration.

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