The effect of a peak in the temperature profile of the diffusion furnace for silicon solar cell fabrication

Akhter, P.; Baig, Arif; Ahmed, B. Shameer; Mufti, A.

doi:10.1088/0268-1242/4/5/013

Cited by 2 publications

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“…This demands extreme care in maintaining a uniform temperature profile inside the diffusion furnace for consistent results. However, some authors observed that such furnaces have an inherent character such that their temperature profiles show a turbulent character at the loading zone of the furnace that could seriously affect the diffusion profile during the process [15].…”

Section: Emitter Formationmentioning

confidence: 99%

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Optimization of Phosphorus Emitter Formation from POCl3 Diffusion for p-Type Silicon Solar Cells Processing

Ghembaza

Zerga

Saïm

et al. 2016

Silicon

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International audienceThe main purpose of this work is to demonstrate the possibility of diffusion process perfection during silicon solar cells manufacturing by CFD simulation. Presently, the major community of PV industries uses a p-type silicon solar cell as the starting material. In this work too, boron doped silicon wafers are considered to form solar cells. Likewise, phosphorus oxy-chloride (POCl3) is used as a precursor for phosphorus diffusion. To do this, we evaluate the throughput of an industrial low-pressure diffusion tube furnace in order to realize uniform emitters. The low-pressure tube furnace is designed to obtain emitter standard sheet resistances of about 60 Ω/sq and wafer uniformity less than 3 %. An up-to-date control model using for the first time a CFD numerical code has been derived from some previous work, to achieve better wafer to wafer temperature distribution. Moreover, a numerical process was built using an Atlas-Silvaco® TCAD Simulation Package where we can demonstrate that the short circuit current density (Isc) increases from 4.97 to 6.53 mA/cm2 compared to the conventional photovoltaic process. This (Isc) enhancement can be attributed to the strong temperature effect on furnace atmosphere. Our result proves that we can target electrical properties of an emitter only by the manipulation and optimization of the doping profile. This process refinement is expected to contribute in the development of high efficiency conventional crystalline silicon solar cells considered for mass production

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Section: Emitter Formationmentioning

confidence: 99%

“…This makes the material particularly useful for critical applications which require minimum sensitivity tõ DOI 10.1007s12633-016-9458-0 thermal changes. Also, we expect the process to be cleaner in a POCl 3 furnace because of the use of quartz boats [15].…”

Section: Introductionmentioning

confidence: 99%