The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

Blokhin, S. A.; Bobrov, M. A.; Blokhin, A. A.; Васильев, А. П.; Kuzmenkov, A. G.; Maleev, N. A.; Rochas, S. S.; Gladyshev, A. G.; Babichev, A. V.; Novikov, I. I.; Karachinsky, L. Ya.; Денисов, Д. В.; Voropaev, K. O.; Ionov, A. S.; Egorov, A. Yu.; Ustinov, V. M.

doi:10.1134/s1063785020120172

Cited by 15 publications

(11 citation statements)

References 16 publications

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“…3, a). The observed WAC nonlinearity can be caused by both the sharp increase in the diffraction losses at the BTJ mesa periphery [24] as well as by the formation of the saturating absorber outside the BTJ mesa region (taking into account the lateral current spreading) [25]. The increase in the external temperature of the laser results in amplification of the WAC nonlinearity effect and lasing disappearance at the temperatures > 40 • C. As the light scattering/diffraction on the refraction index heterogeneities weakly depends on the external temperature, it can be suggested that it is mainly contributed by the light absorption at the resonance wavelength in the unpumped parts of the active region, which is sharply amplifying as the maximum of the amplification spectrum of the active region approaches the resonance wavelength of the microresonator.…”

Section: Resultsmentioning

confidence: 99%

“…The lateral current and optical confinements were realized in within the BTJ concept [21] by formation in the composite In 0.53 Ga 0.47 As/In 0.53 Al 0.16 Ga 0.31 As of the tunnel junctions of small mesas of the diameter of 4−8 µm by chemical etching of the n ++ -and p ++ -In 0.53 Ga 0.47 As layers with subsequent epitaxial re-growth of the surface relief by the n-InP layer with the modulated doping profile [17]. The mesa etching depth was selected as a compromise between the high output optical power in the single-mode lasing and suppression of the effect of the saturating absorber in the non-pumped parts of the active region, which occurs in a relatively weak transverse optical confinement [22]. It should be noted that the epitaxial growth of the initial heterostructures of the optical resonator and the DBRs as well as the burial process have been implemented by the MBE method on the industrial unit Riber 49.…”

Section: Experimental Samplesmentioning

confidence: 99%

“…It should be noted that the epitaxial growth of the initial heterostructures of the optical resonator and the DBRs as well as the burial process have been implemented by the MBE method on the industrial unit Riber 49. Other details of the WF-VCSEL heterostructure design are given in the studies [17,22].…”

Section: Experimental Samplesmentioning

confidence: 99%

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1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

et al. 2022

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The results of complex studies of static and dynamic performance of 1550 nm-range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distributed Bragg reflector wafers grown by molecular beam epitaxy, are presented. The VCSELs with a buried tunnel junction diameter less than 7 μm demonstrated a single-mode lasing with a side-mode suppression ratio more than 40 dB; however, at diameters less than 5 μm, a sharp increase in the threshold current is observed. It is associated to the appearance of a saturable absorber due to penetration of optical mode into the non-pumped regions of the active region. The maximum single-mode output optical power and the -3 dB modulation bandwidth reached 4.5 mW and 8 GHz, respectively, at 20oC. The maximum data rate at 20oC under non-return-to-zero on-off keying modulation was 23 Gb/s for a short-reach link based on single-mode fiber SMF-28. As the length of the optical link increased up to 2000 m, the maximum data rate dropped to 18 Gbit/s. The main factors affecting the high-speed operation and data transmission range are defined and discussed, and the further ways to overcome themit are proposed. Keywords: VCSEL, wafer fusion, molecular beam epitaxy, single-mode operation, high-speed performance.

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Section: Resultsmentioning

confidence: 99%

Section: Experimental Samplesmentioning

confidence: 99%

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1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

et al. 2022

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“…При использовании концепции захороненного ТП степень поперечного оптического ограничения зависит от латерального размера мезы ЗТП и глубины травления ТП, а также модификации поверхностного рельефа, сформированного в слоях ТП, при его последующем заращивании внутрирезонаторным контактным слоем. Были проведены соответствующие расчеты в рамках упрощенной двумерной модели пятиступенчатого эффективного волновода [31]. Для исследуемой конструкции СП−ВИЛ величина Ŵ tr для фундаментальной моды оказывается близка к 100% для широкоапертурных приборов (диаметр мезы ЗТП ≥ 6 µm).…”

Section: результаты и их обсуждениеunclassified

Исследование характеристик сверхрешетки InGaAs/InAlGaAs для вертикально-излучающих лазеров спектрального диапазона 1300 nm

Blokhin¹,

Babichev²,

Gladyshev³

et al. 2021

Журнал Технической Физики

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X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm range lasers grown by molecular beam epitaxy. It is shown that the grown heterostructures have a high crystal quality. The perpendicular lattice mismatch of the average crystal lattice constant of the InGaAs/InAlGaAs superlattice with respect to the crystal lattice constant of the InP substrate is estimated at ~ +0.01%. An analysis of the photoluminescence spectra made it possible to conclude that the contribution of Auger recombination is insignificant in the studied range of excitation power density. Studies of vertical-cavity surface-emitting lasers with an active region based on the InGaAs/InAlGaAs superlattice made it possible to estimate the gain coefficient at a level of 650 cm-1 for the standard logarithmic approximation of the dependence of the gain on the current density. The transparency current density of the laser was ~150 А/cm2, which is comparable to the record low values for the case of highly strained InGaAs-GaAs and InGaAsN-GaAs quantum wells in the spectral ranges of 1200 nm and 1300 nm, respectively.

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“…In wide-aperture lasers (in lasers with large TJ diameter), the main contribution to the level of internal optical losses is made by optical losses on free carriers and interband absorption [2]. However, in narrow-aperture lasers, along with the increase in losses depending on the light diffraction, the saturable absorber effect manifests itself, which was previously discovered in the WF-VCSEL in the spectral range 1.55 µm [10] and is due to a decrease in the transverse optical confinement for the fundamental fashion. The effect increases as the size of the BTJ mesa and/or the TJ etching depth decrease, and it also depends on the magnitude of the spectral detuning of the optical gain maximum and the resonant wavelength of the VCSEL.…”

mentioning

confidence: 99%

Analysis of internal optical loss of 1.3 μm vertical-cavity surface-emitting laser based on n-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InAlGaAs tunnel junction

S.A.

Bobrov

A.A.

et al. 2022

Technical Physics Letters

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The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaAsP/AlGaAs a composite n+-InGaAs/p+-InGaAs/p+-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08% and 0.14% per one pass (round-trip) at temperatures of 20oC and 90oC, respectively. Keywords: vertical-cavity surface-emitting laser, wafer fusion, tunnel junction, superlattice, internal optical loss.

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The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

Cited by 15 publications

References 16 publications

1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

Исследование характеристик сверхрешетки InGaAs/InAlGaAs для вертикально-излучающих лазеров спектрального диапазона 1300 nm

Analysis of internal optical loss of 1.3 μm vertical-cavity surface-emitting laser based on n-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InAlGaAs tunnel junction

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