The effect of adding an active layer to the structure of a-Si: H solar cells on the efficiency using RF-PECVD

Prayogi, Soni; Cahyono, Yoyok; Iqballudin, Irsyad; Stchakovsky, M.; Darminto, D.

doi:10.1007/s10854-021-05477-6

Cited by 27 publications

(28 citation statements)

References 30 publications

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“…3 show represents the top-view SEM images of the doped and pure TiO2 films. These images confirm that the microstructure of both samples exhibits spherical-shaped particles with irregular morphology due to the agglomeration of primary particles during the annealing treatment [21]. It can be seen that smaller particles with an average diameter of 10 − 11 nm were measured for pure TiO2 and around 35 nm for SnO2 doped TiO2 film.…”

Section: Resultssupporting

confidence: 72%

The Effect of Addition of SnO2 Doping on The Electronic Structure of TiO2 Thin Film as Photo-Anode in DSSC Applications

Prayogi

Marzuki

2022

J. Emerg. Sup. Chain Clean En. and Proc. Eng.

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Photoanode is a component of the dye-sensitized solar cell (DSSCc) which is synthesized from metal oxide semiconductor material with nanoparticle size deposited on transparent conductive glass. TiO2 powder was synthesized by mixing 20 mL of Titanium (III) chloride (TiCl3) with 100 mL of the equator and stirred for 1 hour. TiO2-SnO2 thin films have been successfully synthesized using the coprecipitation method and coated on ITO (Indium Tin Oxide) substrate by doctor-blade technique. The structure and morphology of the films were investigated by XRD and SEM respectively. The analysis of optical characteristics shows that the absorbance of TiO2 photoanode is in the wavelength range of 300-600 nm while SnO2 is in the wavelength range of 300-870 nm. The results showed that the synthesized film with SnO2 had a stronger anatase formation than the film with pure TiO2. Finally, incorporating SnO2 into the TiO2 matrix is an effective strategy to improve the overall properties of solar cells in future applications

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Section: Resultssupporting

confidence: 72%

The Effect of Addition of SnO2 Doping on The Electronic Structure of TiO2 Thin Film as Photo-Anode in DSSC Applications

Prayogi

Marzuki

2022

J. Emerg. Sup. Chain Clean En. and Proc. Eng.

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“…Penambahan doping PH3 (Phosphine) dengan konsentrasi rendah terhadap lapisan intrinsik menghasilkan peningkatan kinerja sel surya a-Si:H dengan efisiensi 8.85% (VOC = 0.68 V; JSC = 19.43 mA/cm 2 ; FF = 0.67) yang dicapai untuk doping lapisan intrinsik dengan konsentrasi PH3 sekitar 780 ppm [10]. Selain itu, modifikasi sel surya struktur p-i-n dengan penambahan lapisan intrinsik dengan celah pita energi berbeda menjadi struktur p-i1-i2-n memberikan dampak pada peningkatan efisiensi dari 5.61% menjadi 8.86% yang terjadi akibat peningkatan penyerapan cahaya pada lapisan intrinsik sehingga pasangan elektron-hole yang terbentuk menjadi lebih tinggi yang mampu meningkatkan photogenerated current dan mengurangi proses rekombinasi pada lapisan intrinsik [11].…”

Section: Pendahuluanunclassified

Pengaruh Rapat Cacat Dangling-Bond Lapisan (p)a-Si:H Pada Kinerja Sel Surya Struktur p-i-n

Hamdani

2022

JIIF

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Validasi numerik terhadap sel surya homojunction berbasis a-Si:H hasil eksperimen secara fisis dianalisis menggunakan perangkat AFORS-HET (Automat FOR Simulation of HETerostructure) dengan meninjau pengaruh cacat dangling-bond (DB) pada lapisan (p)a-Si:H (Ntr) terhadap kinerja sel surya struktur TCO/(p)a-Si:H/(i)a-Si:H/(n)a-Si:H/Ag. Variasi Ntr diberikan sesuai dengan hasil eksperimen antara 5.0 x 10 17 -5.0 x10 19 cm -3 /eV yang dioperasikan pada ketebalan lapisan-p berbeda disertai dengan analisis diagram pita energi, kurva karakteristik J-V, profil medan listrik, dan konsentrasi pembawa muatan. Hasil simulasi menunjukkan bahwa sel surya bekerja secara optimum jika nilai parameter Ntr mampu dikontrol untuk nilai <5.0 x 10 18 cm -3 /eV, dimana pada kondisi ini efisiensi yang bisa dicapai sekitar 7.68% (VOC = 947.2 mV, JSC = 10.84 mA/cm 2 ; FF = 74.82%) pada ketebalan lapisan-p sekitar 10 nm.

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“…Besides have good electrical transport properties to enable photo-generated electrons and holes to exit the device before recombination, it also has good light absorption properties to produce as many electron-hole pairs as possible at a given light intensity with phosphorus doping of the (i)a-Si:H layer about 2.0 x 10 18 atom/cm 3 with a conversion efficiency of 8.85% (VOC = 0.68 V, JSC = 19.43 mA/cm 2 , FF = 0.67) [4]. Reported that by the addition of an intrinsic layer (with a different bandgap) to the a-Si:H p-i-n solar cell structure was deposited using rf-PECVD techniques, the conversion efficiency of the new structure (p-i1-i2-n solar cell) is enhanced from 5.61% to 8.86% [5]. The conversion efficiency of a-Si:H solar cells is still low compared to crystalline-based solar cells.…”

Section: Introductionmentioning

confidence: 99%

Analysis of ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/Al HIT (Heterostructure with Intrinsic Thin Layer) solar cell performances.

Satriani

Munir

Natalisanto

et al. 2023

ELKHA

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Numerical simulation on HIT (Heterostructure with Intrinsic Thin Layer) solar cell using hetero-structure ITO/(p+)a-Si:H/(i)a-Si:H/(n)c-Si/Al solar cell has been done using AFORS-HET (Automate For Simulation of Heterostructure) software. The purpose of this study is to provide validation as well optimization model of solar cell enhanced performances. Data analysis shows a significant increase on solar power generation. An intrinsic thin layer given between the hetero-interface to reduce defect properties on solar cell structure. The optimization using an optimal value of acceptor-donor doping, dangling-bond defects ( ), thin conductive oxide work function ( ), and other input shows a reducing recombination-rates, as a validation Figure of Merits (FOMs) data reach a maximum efficiency value at 23,67% ( = 634,2 mV; = 51,2 mA/cm2; = 72,91%, this result achieved on peak data such = 5,2 eV, Na (doping) = 5.0 x 1019 cm-3, = 1.0 x 1018 cm-3, (interface defect) = 1.0 x 1010 cm-3. The results obtained from this simulation produce a number of optimum parameters that can be followed up experimentally to obtain better solar cell performances.

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The effect of adding an active layer to the structure of a-Si: H solar cells on the efficiency using RF-PECVD

Cited by 27 publications

References 30 publications

The Effect of Addition of SnO2 Doping on The Electronic Structure of TiO2 Thin Film as Photo-Anode in DSSC Applications

The Effect of Addition of SnO2 Doping on The Electronic Structure of TiO2 Thin Film as Photo-Anode in DSSC Applications

Pengaruh Rapat Cacat Dangling-Bond Lapisan (p)a-Si:H Pada Kinerja Sel Surya Struktur p-i-n

Analysis of ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/Al HIT (Heterostructure with Intrinsic Thin Layer) solar cell performances.

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