The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Teke, Ali; Gökden, Sibel; Tülek, Remziye; Leach, J. H.; Fan, Qian; Xie, Jinqiao; Özgür, Ü.; Morkoç̌, H.; Li̇şesi̇vdi̇n, S. B.; Özbay, Ekmel

doi:10.1088/1367-2630/11/6/063031

Cited by 65 publications

(58 citation statements)

References 23 publications

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“…These studies reported low mobilities with the use of thick AlN interlayers. In a recent study, effects of AlN thicknesses on transport properties are studied in details, and 1 nm AlN interlayer thickness is suggested as an optimal thickness [26]. There are significant differences between the fitting parameters obtained from the scattering analysis by using the data extracted with QMSA and the single field Hall data.…”

Section: Resultsmentioning

confidence: 99%

Well parameters of two‐dimensional electron gas in Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Tasli¹,

Li̇şesi̇vdi̇n

Yıldız

et al. 2010

Cryst. Res. Technol.

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Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the quantitative mobility spectrum analysis (QMSA). A two-dimensional electron gas (2DEG) channel located at the Al 0.88 In 0.12 N/GaN interface with an AlN interlayer and a two-dimensional hole gas (2DHG) channel located at the GaN/AlN interface were determined for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures. The interface parameters, such as quantum well width, the deformation potential constant and correlation length as well as the dominant scattering mechanisms for the Al 0.88 In 0.12 N/GaN interface with an AlN interlayer were determined from scattering analyses based on the exact 2DEG carrier density and mobility obtained with QMSA.

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Section: Resultsmentioning

confidence: 99%

Well parameters of two‐dimensional electron gas in Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Tasli¹,

Li̇şesi̇vdi̇n

Yıldız

et al. 2010

Cryst. Res. Technol.

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“…Here GaN-based ternary nitrides, Al x Ga 1-x N, In x Ga 1-x N and In x Al 1-x N, stand out. Since the band gaps of the binary constituents differ by several eV (6.2 eV for AlN, 3.6 eV for GaN and 0.7 eV for InN), even minuscule spatial composition variations induce such effects as the spectral broadening [6], spatial nonuniformity of radiative and nonradiative recombination times [7], and increased alloy scattering [8]. All of these phenomena have a large impact of the efficiency and longevity of GaN-based photonic and electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Multimode scanning near-field photoluminescence spectroscopy and its application for studies of InGaN epitaxial layers and quantum wells

Marcinkevičius¹,

Uždavinys²,

Ivanov³

et al. 2018

physics

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The paper reviews our recent achievements in developing a multimode scanning near-field optical microscopy (SNOM) technique. The multimode SNOM apparatus allows us to simultaneously measure spatial variations of photoluminescence spectra in the illumination and illumination-collection modes, their transients and sample surface morphology. The potential of this technique has been demonstrated on a polar InGaN epitaxial layer and nonpolar InGaN/GaN quantum wells. SNOM measurements have allowed revealing a number of phenomena, such as the band potential fluctuations and their correlation to the surface morphology, spatial nonuniformity of the radiative and nonradiative lifetimes, as well as the extended band nature of localized states. The combination of different modes enabled measurements of the ambipolar carrier diffusion and its anisotropy.

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“…Many studies have been performed to improve the performance of devices, such as increasing the Al composition of an AlGaN barrier [2], using a thin AlN spacer layer at the AlGaN/GaN interface [3,4], and replacing the GaN with InGaN as the channel [5,6] and AlGaN with AlInN [7][8][9][10][11][12][13][14][15][16] as the barrier. Among these, the lattice-matched AlInN barrier is considered to be the most promising barrier alternative for improving the HEMT performance.…”

Section: Introductionmentioning

confidence: 99%

“…Similarly, Tulek et al [14] reported a very high electron density of 4.23 × 10 13 cm −2 with a corresponding electron mobility of 812 cm 2 /Vs which yielded a record two-dimensional sheet resistance of 182 Ω/sq for heterostructure with an Al 0.88 In 0.12 N barrier layer. In addition, the introduction of a thin AlN spacer layer at the AlInN/GaN interface increases the carrier density and effectively reduces the alloy scattering of two-dimensional electron gas (2DEG) as well as provides better carrier confinement [14,15].…”

Section: Introductionmentioning

confidence: 99%

“…In this study, for d 1 /d 2 (7/1.5), the lowest sheet resistance of 231.8 Ω/sq along with an electron mobility of 1580 cm 2 /Vs was reported. Additionally, in our previous work [15] we have investigated a group of AlInN/GaN/AlN/GaN heterostructures some of which include a thin (2-3 nm) unintentional GaN layer on top of the AlN spacer due to residual Ga in the chamber during growth. It was found that the sample including the unintentional GaN (is now considered as a second channel if populated by carriers) with a 1 nm AlN spacer layer showed better transport performance.…”

Section: Introductionmentioning

confidence: 99%

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The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

et al. 2014

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One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline qualities, surface morphologies, and dislocation densities of the samples were investigated using high resolution transmission electron microscopy, atomic force microscopy, and high-resolution X-ray diffraction. Some of the data provided by these measurements were used as input parameters in the calculation of the scattering mechanisms that govern the transport properties of the studied samples. Experimental transport data were obtained using temperature dependent Hall effect measurements (10-300 K) at low (0.5 T) and high (8 T) magnetic fields to exclude the bulk transport from the two-dimensional one. The effect of the thickness of the second GaN layer inserted between two AlN barrier layers on mobility and carrier concentrations was analyzed and the dominant scattering mechanisms in the low and high temperature regimes were determined. It was found that Hall mobility increases as the thickness of GaN increases until 5 nm at a low temperature where interface roughness scattering is observed as one of the dominant scattering mechanisms. When GaN thicknesses exceed 5 nm, Hall mobility tends to decrease again due to the population of the second channel in which the interface becomes worse compared to the other one. From these analyses, 5 nm GaN layer thicknesses were found to be the optimum thicknesses required for high electron mobility.

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The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Cited by 65 publications

References 23 publications

Well parameters of two‐dimensional electron gas in Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Well parameters of two‐dimensional electron gas in Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Multimode scanning near-field photoluminescence spectroscopy and its application for studies of InGaN epitaxial layers and quantum wells

The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

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The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Cited by 65 publications

References 23 publications

Well parameters of two‐dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Well parameters of two‐dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Multimode scanning near-field photoluminescence spectroscopy and its application for studies of InGaN epitaxial layers and quantum wells

The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

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Well parameters of two‐dimensional electron gas in Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Well parameters of two‐dimensional electron gas in Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by MOCVD