The effect of annealing on the sensing properties of porous silicon gas sensor: Use of screen-printed contacts

Mahmoudi, B.; Gabouze, N.; Haddadi, M.; Mahmoudi, Br.; Cheraga, H.; Beldjilali, K.; Dahmane, D.

doi:10.1016/j.snb.2006.10.005

Cited by 30 publications

(7 citation statements)

References 14 publications

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“…For example, freshly etched PSi has a hydride‐terminated surface with hydrophobic properties which is usually unstable and does not provide good binding sites for organic vapors . Therefore, as a rule, immediately after etching, as‐prepared PSi undergoes various treatments such as thermal oxidation, silanization, carbonization, and functionalization through the covalent binding of functional groups, aimed at imparting the required functionality to the surface and increasing the stability of this surface state. For example, the thermal oxidation of PSi leads to a more hydrophilic surface with much stronger binding sites for vapors of organic solvents and water .…”

Section: Approaches To Optimization Of Psi‐based Gas and Vapor Sensorsmentioning

confidence: 99%

How to Improve the Performance of Porous Silicon‐Based Gas and Vapor Sensors? Approaches and Achievements

Rusu

2019

Physica Status Solidi (a)

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It is shown that, along with the advantages, sensors based on porous silicon (PSi) have disadvantages that inhibit their widespread use. The parameters of PSi which can affect the performance of PSi-based sensors are considered in detail, and approaches are analyzed that allow for the improvement of the main characteristics of PSi-based gas and vapor sensors. It is concluded that despite the progress made in terms of improving the sensitivity, selectivity, and stability of PSi-based sensors, further research and development in this direction is necessary, as the existing methods do not provide the required stability of the characteristics and selectivity of their response.

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Section: Approaches To Optimization Of Psi‐based Gas and Vapor Sensorsmentioning

confidence: 99%

How to Improve the Performance of Porous Silicon‐Based Gas and Vapor Sensors? Approaches and Achievements

Rusu

2019

Physica Status Solidi (a)

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“…Moreover, the sensitivity of TC-PSi is presumably better due to its larger speci fi c surface area. Mahmoudi et al ( 2007a ) have shown that plasma in a methane/argon mixture can also be used for deposition of a hydrocarbon layer. A longtime stabilization of the PL intensity of CH x /PSi has been con fi rmed by PL measurements at intervals of 1 month in aging time.…”

Section: -H Simentioning

confidence: 99%

Structure and Surface Modification of Porous Silicon

Korotcenkov

2013

Integrated Analytical Systems

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We need to recognize that morphology control and structure reproducibility present great problems with porous Si, especially mesoporous and nanoporous silicon applied in gas sensors. It was established that there are too many factors which in fl uence PSi morphology. PSi porosity and morphology depend on electrolyte composition, current density, lighting, magnetic fi eld, ultrasonic agitation and etching time during anodization, pH and temperature of solution used, orientation and doping of wafer, surface patterning, etc. (Korotcenkov and Cho 2010a ) . Several examples of the indicated factors that in fl uence PSi porosity and pore size are shown in Fig. 26

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“…The surface modification of the silicon wafer plays a major role in the sensitivity enhancement of silicon (Si) toward several analytes, and it was successfully deployed in the development of a large variety of biosensors [ 2 , 3 , 4 , 5 , 6 ]. Furthermore, several applications of PSi were investigated, such as light emitted diodes (LED) [ 7 , 8 , 9 ], photodetectors [ 10 , 11 , 12 ], waveguides [ 13 ], and chemical sensors for detection of various chemicals [ 5 , 14 , 15 , 16 , 17 ]. Furthermore, PSi exhibits a number of properties that make it an attractive material for controlled drug delivery applications [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

Al-Hardan

Hamid

Ahmed

et al. 2016

Sensors

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In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

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The effect of annealing on the sensing properties of porous silicon gas sensor: Use of screen-printed contacts

Cited by 30 publications

References 14 publications

How to Improve the Performance of Porous Silicon‐Based Gas and Vapor Sensors? Approaches and Achievements

How to Improve the Performance of Porous Silicon‐Based Gas and Vapor Sensors? Approaches and Achievements

Structure and Surface Modification of Porous Silicon

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

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