“…Tungsten oxide (WO 3 ) is an n-type semiconductor that has been considered so far as one of the most promising materials for photoanodes for photoelectrochemical (PEC) water splitting due to its superior charge transport properties, moderate hole diffusion length and, mostly, a relatively narrow band gap (2.5-2.8 eV). Many different methods have been employed for the synthesis of WO 3 nanomaterials, including chemical vapor deposition (CVD) [1], hydrothermal methods [2,3], sol−gel processes [4], electrodeposition [5], anodic oxidation (anodization) [6][7][8], and many others [9]. Among these techniques, electrochemical oxidation of metallic tungsten has received considerable attention since it can be applied to synthesize nanostructured WO 3 with various morphologies such as nanoporous [6,8,[10][11][12][13][14][15] or nanotubular layers [10,16], compact films [8,12,14], nanoplates [17,18], nanowires [11], and others [11,14].…”