The effect of Ar flow rate in the growth of SiGe:H thin films by PECVD

Tang, Zeguo; Wang, Wenbin; Wang, Desheng; Liu, Dequan; Liu, Qiming; Yin, Min; He, Deyan

doi:10.1016/j.apsusc.2010.05.019

Cited by 6 publications

(2 citation statements)

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“…Argon (Ar) is often used as the sputtering gas in magnetron sputtering. The considerable influence of the rate of Ar flow on the deposited semiconductor thin films is reported [5][6][7]. However, the effects of Ar flow and radio frequency (rf) power on the growth morphology of Ge nanoislands deposited on Si(100) substrate are not widely studied.…”

Section: Introductionmentioning

confidence: 99%

“…They found that by increasing the Ar flow rate, the deposition rate is enhanced, which is attributed to the increased dissociation efficiency of source gases. The film crystallinity is effectively promoted by the addition of Ar, which is related to the increase in bombardment on the growth zone by metastable states of Ar; a large amount of energy from the deexcitation of Ar to its ground state causes the growth zone to relax [5].…”

Section: Introductionmentioning

confidence: 99%

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Self-assembled Ge/Si nanoislands: effect of argon flow and radio frequency power

et al. 2014

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The growth of a germanium-silicon (Ge/Si) heterostructure using radio frequency (rf) magnetron sputtering under optimized conditions is performed. High-density self-assembled Ge nanoislands ∼14 nm in size are obtained directly on Si(100) under 10 sccm argon (Ar) flow and 100 W rf power. The surface roughness and number density of nanoislands revealed by atomic force microscopy are found to be in the range of 3.7-0.6 nm and 45 × 10 2 -20 × 10 2 µm −2 , respectively. An increase in Ar flow and rf power leads to an enhancement of defects, anti-sputtering of the deposited islands and a decrease in the sample quality. X-ray diffraction is used to measure the strain, which is found to be close to the lattice misfit of Ge and Si. It shows the carefully controlled growth condition with minimum density of dislocation. Room temperature photoluminescence exhibits a very strong blue-violet peak at 3.2 eV, which is attributed to the transition from excited triplet level to grand-state singlet level.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%