1979
DOI: 10.1016/s0042-207x(79)80335-8
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The effect of bakeout temperature on the electron and ion induced gas desorption coefficients of some technological materials

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Cited by 55 publications
(13 citation statements)
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“…When the argon is injected to the gun, the pressure increase in the system is negligible. The ion current density to the sample was 2.5 ð10 8 -10 6 A cm 2 and the ion energy was 3 keV. For each series of measurements the carousel of the manipulator incorporated two aluminium samples, two copper samples and two copper samples electrodeposited on stainless steel.…”
Section: Experimental and Measurement Proceduresmentioning
confidence: 99%
See 1 more Smart Citation
“…When the argon is injected to the gun, the pressure increase in the system is negligible. The ion current density to the sample was 2.5 ð10 8 -10 6 A cm 2 and the ion energy was 3 keV. For each series of measurements the carousel of the manipulator incorporated two aluminium samples, two copper samples and two copper samples electrodeposited on stainless steel.…”
Section: Experimental and Measurement Proceduresmentioning
confidence: 99%
“…300-400°C. 6 Thus, an additional condition to this investigation was to limit thermal treatments to temperatures no higher than 200°C. On the basis of previous studies, material candidates with good mechanical properties for low ion-stimulated desorption rates are Al and Cu.…”
Section: Introductionmentioning
confidence: 99%
“…There a sample of chemically cleaned stainless steel is bombarded by 1400 eV electrons and the number and species of the gas molecules desorbed is measured as a function of the bake-out temperature (7). Essentially, the higher the bake-out temperature,…”
Section: Bake-outmentioning
confidence: 99%
“…11 The sharp decrease of surface oxygen concentration after heating Ti-based alloys at ¾400°C in a vacuum has been observed also by means of Auger electron spectroscopy (AES). 15 Part of the decrease of the oxygen signal is also due to dehydroxylation of the Ti surface, which is effective at ¾250°C. 16 The approximated atomic concentrations [Ti], [Zr] and [V] have been calculated using Scofield's cross-sections, 17 the energy dependence of the hemispherical analyser transmission function as specified by the manufacturer (E kin 1 ), and an electron-mean-free-path scaling as E kin 1/2 , where E kin is the kinetic energy of the photoelectrons.…”
Section: Introductionmentioning
confidence: 99%