The Effect of Bifacial AlOx Deposition on PERC Solar Cell Performance

To, Alexander; Tahir, Sohail Afzal; Garavaglia, Alessandro; Li, Weiming; Li, Xiang; Hoex, Bram

doi:10.1109/jphotov.2017.2745699

Cited by 11 publications

(4 citation statements)

References 20 publications

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“…Hydrogenation treatments in c‐Si solar cell technology are often performed via forming gas annealing (FGA) of samples in a mixture of H 2 and inert gas, by annealing the samples without any capping layers in a mixture of water vapor and N 2 , or by depositing hydrogen‐rich capping layers such as AlO x :H or SiN x :H and annealing them in N 2 or FGA. Previously, we have noticed that in the case of low‐resistivity substrates (1 Ω cm), FGA of poly‐Si/SiO x passivating contacts resulted in little performance improvement, whereas others have reported a noticeable improvement .…”

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confidence: 99%

Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

et al. 2019

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Herein, posttreatment techniques of phosphorus‐doped poly‐Si/SiOx passivating contacts, including forming gas annealing (FGA), atomic layer deposition (ALD) of hydrogenated aluminum oxide (AlOx:H), and plasma‐enhanced chemical vapor deposition (PECVD) of hydrogenated silicon nitride (SiNx:H), are investigated and compared in terms of their application to silicon solar cells. A simple FGA posttreatment produces a significant increase in the implied open circuit voltage (iVoc) and the effective minority‐carrier lifetime (τeff) of high‐resistivity crystalline Si (c‐Si) samples, whereas low‐resistivity samples show a minimal change. Treatment by means of AlOx:H and/or SiNx:H followed by postdeposition FGA results in a universal increase in τeff and iVoc for all substrate resistivities (as high as 12.5 ms and 728 mV for 100 Ω cm and 5.4 ms and 727 mV for 2 Ω cm n‐type c‐Si substrates). In addition, both the FGA and AlOx:H + FGA techniques can inject sufficient hydrogen into the samples to passivate defects at the SiOx/c‐Si and poly‐Si/SiOx interfaces. However, this hydrogen concentration is insufficient to neutralize both the nonradiative defects inside the poly‐Si films and dangling bonds associated with the amorphous Si phase present in them. The hydrogen injected by the SiNx:H + FGA technique can passivate both the interfaces and the defects and dangling bonds within the poly‐Si film. These results are confirmed by low‐temperature photoluminescence spectroscopy, Fourier transform infrared spectroscopy, and dynamic secondary‐ion mass spectrometry measurements.

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confidence: 99%

Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

et al. 2019

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“…Performance of current mainstream silicon solar cell technologies and simulated TMO-integrated POLO cells using TiO x contacts proposed in this work. ,,,− …”

Section: Resultsmentioning

confidence: 99%

Investigation of H₂ Plasma Incorporated ALD-TiO_x Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Chen,

Berriel,

Currie

et al. 2024

ACS Appl. Energy Mater.

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In this work, we present an integrated method for the deposition of TiO x through introducing H 2 plasma pulses into the atomic layer deposition process. The potential of TiO x films deposited through this process as a hole-selective passivating contact in crystalline silicon solar cells was evaluated in terms of passivation quality, carrier selectivity, electrical properties, and optical performance. The combination of the growth process with post-H 2 plasma treatment yields TiO x films with superior passivation quality, carrier selectivity, and electrical properties. Simulations demonstrate the potential of our TiO x -based heterojunction as opposed to hydrogenated amorphous and polycrystalline silicon-based heterojunctions. Finally, we report that the performance of n-type tunnel oxide passivated contact cells can be further improved through replacing the front homojunction with our TiO x -based heterojunction, referred to as transition metal oxide-integrated polycrystalline silicon on oxide solar cells in our work.

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“…This characteristic prevents the formation of inversion layers, which could lead to parasitic shunting, and significantly diminishes recombination losses that typically occur due to direct metal-silicon contact. [20,21] PERC and passivated emitter and rear locally diffused (PERL) are two typical examples where the full-area AlO x contact scheme is applied (Figure 3b,c). In addition, introducing localized rear surface openings and patterned designs minimizes the contact area between c-Si and the back electrode, thereby facilitating optimal electrical contact.…”

Section: Alo X : the Key To The Industrialization Of Perc Cellsmentioning

confidence: 99%

“…Atomic layer deposition (ALD) and PECVD are the primary methods for depositing AlO x films. [ 20 ] However, AlO x layers deposited by PECVD tend to have a lower density, resulting in inferior passivation than those deposited by ALD. [ 27 ] A sufficiently thick AlO x layer, typically greater than 15 nm, is necessary for optimal passivation in the PECVD process.…”

Section: Initial Passivation Strategymentioning

confidence: 99%

Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

Li,

Xu,

Yan

et al. 2024

Advanced Energy Materials

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Solar photovoltaics (PV) are poised to be crucial in limiting global warming by replacing traditional fossil fuel generation. Within the PV community, crystalline silicon (c‐Si) solar cells currently dominate, having made significant efficiency breakthroughs in recent years. These advancements are primarily due to innovations in solar cell technology, particularly in developing passivating contact schemes. As such, this review article comprehensively examines the evolution of high‐efficiency c‐Si solar cells, adopting a historical perspective to investigate the advancements in passivation contact techniques and materials to state‐of‐the‐art cell designs. Additionally, this work deeply studies the recent advances and critical design principles underlying each developed passivation scheme. Eventually, this work identifies existing challenges and proposes insights into future directions for c‐Si solar cells through diverse passivating contact strategies.

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The Effect of Bifacial AlOx Deposition on PERC Solar Cell Performance

Cited by 11 publications

References 20 publications

Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

Investigation of H₂ Plasma Incorporated ALD-TiO_x Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

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The Effect of Bifacial AlOx Deposition on PERC Solar Cell Performance

Cited by 11 publications

References 20 publications

Hydrogenation Mechanisms of Poly‐Si/SiOx Passivating Contacts by Different Capping Layers

Hydrogenation Mechanisms of Poly‐Si/SiOx Passivating Contacts by Different Capping Layers

Investigation of H2 Plasma Incorporated ALD-TiOx Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

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Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

Investigation of H₂ Plasma Incorporated ALD-TiO_x Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells