The effect of charge in junction termination extension passivation dielectrics

Trost, J.; Ridley, R.S.; Khan, M.K.R.; Grebs, T.; Evans, H. L.; Arthur, Steve

doi:10.1109/ispsd.1999.764094

Cited by 20 publications

(5 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since both samples came from the same source but sample C is of a newer vintage, we can infer that their device processing has substantially improved. When Okayama et al used TVS to study SiC DMOSFETs [2], they detected lower concentrations of ~1x10 11 cm -2 but suggested much more may be present due to contamination from field oxide [11].…”

Section: Resultsmentioning

confidence: 99%

Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices

Habersat

Lelis

Green

2012

MSF

View full text Add to dashboard Cite

Since power devices such as DMOSFETs will operate at high temperature where mobile ion effects are enhanced, identifying their presence is a key reliability issue for power electronics applications. We have detected the presence of mobile ion contamination in some SiC MOS device sample sets and correlated those results with observed high temperature bias instability. The differing behaviors of these devices to bias stressing as a function of temperature suggests that in some cases mobile ion drift may be counteracting the typical charge trapping effect. Triangular voltage sweep (TVS) data indicates the presence of roughly 1-4x1012cm-2mobile ions in samples where the bias instability significantly decreased with higher temperature, while samples with a nearly flat or positive-trending response showed overall lower ion contaminations of roughly 6-9x1011cm-2. These results, although preliminary, support the theory that mobile ion contamination is the cause of negative bias instability at elevated temperatures in SiC MOS.

show abstract

Section: Resultsmentioning

confidence: 99%

Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices

Habersat

Lelis

Green

2012

MSF

View full text Add to dashboard Cite

show abstract

“…The amount of shift getting larger for longer stress duration and at higher temperature suggests existence of a larger than 1 · 10 11 cm À2 mobile ionic charge in our DMOSFET devices. Trost et al [20], who have investigated passivation dielectrics of Si power devices, observed a mobile charge density of P1 · 10 12 cm À2 in the dielectrics. Although their investigation is on the Si power devices, the passivation of their Si power device is almost identical to that of our SiC DMOSFET.…”

Section: Resultsmentioning

confidence: 99%

Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs

Okayama

Arthur

Garrett

et al. 2008

Solid-State Electronics

View full text Add to dashboard Cite

“…It has been proved that electrical strength on terminal surface of power devices depends on not only terminal design but also electronic states of surface passivation materials [11,12]. The theoretical blocking capability will be reached if the peak electric field is suppressed by an effective passivation-layer.…”

Section: Resultsmentioning

confidence: 99%