The effect of crystallinity of HfO&lt;inf&gt;2&lt;/inf&gt; on the resistive memory switching reliability

Sung, Min Gyu; Kim, Wan Gee; Yoo, Jun-Hyun; Kim, Sook Joo; Kim, Jung Nam; Gyun, Byung Gu; Byun, Jae-Yong; Kim, Taeh Wan; Kim, Won; Joo, Moon Sig; Roh, Jae–Sung; Park, Sung Ki

doi:10.1109/irps.2011.5784551

Cited by 2 publications

(1 citation statement)

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“…This can be explained by the crystallization of HfO 2 after annealing as shown in the XRD pattern of figure 8. As reported in other results, the amorphous phase of the HfO 2 is preferred to create enough oxygen vacancies for betterswitching characteristics [26,27]. In this experiment, however, the crystallization of HfO 2 does not deteriorate the ReRAM operation.…”

Section: Electrical Characteristic Analysissupporting

confidence: 71%

Performance enhancement of HfO₂-based resistive random-access memory devices using ZnO nanoparticles

Byun

Kim

et al. 2023

Nanotechnology

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In this study, resistive random-access memory (ReRAM) devices with ZnO nanoparticles (NPs) are suggested to enhance performance and reduce variation in device switching parameters. The ZnO NPs are formed by annealing ZnO prepared via atomic layer deposition on HfO2, which is verified using transmission electron microscopy (TEM), X-ray diffraction pattern (XRD), and atomic force microscopy (AFM). The depth profile analysis of X-ray photoelectron spectroscopy (XPS) shows that oxygen diffuses from HfO2 to ZnO NPs during annealing. This can be explained by the calculation results using density functional theory where the formation energy of oxygen vacancies is reduced at the interface of ZnO NPs and HfO2 compared to single HfO2. The fabricated ZnO NPs ReRAM demonstrates reduced forming voltage, stable resistive switching behavior, and improved cycle-to-cycle uniformity in a high-resistance state.

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Section: Electrical Characteristic Analysissupporting

confidence: 71%

Performance enhancement of HfO₂-based resistive random-access memory devices using ZnO nanoparticles

Byun

Kim

et al. 2023

Nanotechnology

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Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

Kim¹

2012

2012 4th IEEE International Memory Workshop

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The effect of crystallinity of HfO<inf>2</inf> on the resistive memory switching reliability

Cited by 2 publications

References 6 publications

Performance enhancement of HfO₂-based resistive random-access memory devices using ZnO nanoparticles

Performance enhancement of HfO₂-based resistive random-access memory devices using ZnO nanoparticles

Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

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The effect of crystallinity of HfO<inf>2</inf> on the resistive memory switching reliability

Cited by 2 publications

References 6 publications

Performance enhancement of HfO2-based resistive random-access memory devices using ZnO nanoparticles

Performance enhancement of HfO2-based resistive random-access memory devices using ZnO nanoparticles

Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

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Performance enhancement of HfO₂-based resistive random-access memory devices using ZnO nanoparticles

Performance enhancement of HfO₂-based resistive random-access memory devices using ZnO nanoparticles