The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Ji, Kwang Hwan; Kim, Ji In; Jung, Hong Yoon; Park, Se Yeob; Mo, Yeon Gon; Jeong, Jae Hoon; Kwon, Jang Yeon; Ryu, Myung Kwan; Lee, Sang Yoon; Choi, Rino; Jeong, Jae Kyeong

doi:10.1149/1.3483787

Cited by 62 publications

(22 citation statements)

References 23 publications

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“…In particular, the NBS is much better than those of other reported solution-processed oxide TFTs, including IZO and ZTO:F TFTs81115. Also, ΔV th for PBS is comparable to previously-reported values of the oxide TFTs591028. The negative and positive gate bias temperature stress (NBTS and PBTS) were also measured at an additional thermal stress of 60°C, as shown in Fig.…”

Section: Resultssupporting

confidence: 69%

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

Seo

Jeon

Hwang

et al. 2013

Sci Rep

164

110

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Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2 hrs on polyethylene naphthalate films. The proposed thermal evolution mechanism of metal fluoride aqueous precursor solution examined by thermogravimetric analysis and Raman spectroscopy can easily explain oxide formation. The chemical composition analysed by XPS confirms that the fluorine was doped in the thin films annealed below 250°C. In the IZO:F thin films, a doped fluorine atom substitutes for an oxygen atom generating a free electron or occupies an oxygen vacancy site eliminating an electron trap site. These dual roles of the doped fluorine can enhance the mobility and improve the gate bias stability of the TFTs. Therefore, the transparent flexible IZO:F TFT shows a high mobility of up to 4.1 cm2/V·s and stable characteristics under the various gate bias and temperature stresses.

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Section: Resultssupporting

confidence: 69%

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

Seo

Jeon

Hwang

et al. 2013

Sci Rep

164

110

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“…42 The N it (8.9 Â 10 11 /cm 2 ) of the SiN x -gate device was approximately 3 times higher than that (3.0 Â 10 11 /cm 2 ) of SiO 2 -gated device, which was approximated from the subthreshold gate swing values from both devices. 43 The inferior stability of the nitride device was manifested more clearly under NBIS conditions. Although the V th value for SiN x -gated device was shifted significantly in the negative direction (by 11.6 V), the SiO 2 -gated device exhibited V th movement of only À0.78 V. The consistent inferior stability of the IGZO TFTs with the SiN x gate dielectric is believed to originate from its high N it value, which concurs with the trapping mechanism of the photoinduced hole carriers.…”

Section: Carrier Trapping or Injection Modelmentioning

confidence: 99%

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

2013

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Metal oxide optoelectronics is an emerging field that exploits the intriguing properties of the ns orbital-derived isotropic band structure as a replacement for traditional silicon-based electronics in advanced active-matrix information displays. Although the device performance of metal oxide thin film transistors (TFTs) has been substantially improved, the device reliability against external light and gate bias stress remains a critical issue. This paper provides a literature review of light-induced gate bias stress instability in metal oxide TFTs and explain the importance of photo-bias instability in the applications of metal oxide TFTs to optoelectronic device. The rationale of threshold voltage (V th ) instability under the negative bias illumination stress (NBIS) condition is discussed in detail. The charge trapping/injection model, oxygen vacancy photoionization model, and ambient interaction model are described as plausible degradation mechanisms. Finally, the possible approaches to prevent NBIS-induced V th instability are proposed based on an understanding of the NBIS instability.

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“…Upon decreasing the deposition pressure from 5 to 1 mTorr, the calculated V FB and A values were varied from −2.0 V and 30.8 eV −1 to −1.1 V and 29.5 eV −1 , respectively. In previous reports [23,24], the calculated A value of the a-IGZO system by MN rule was in the range of 19-24.3 eV -1 , which varied by process condition and/or G/I material. The total DOS distribution for three devices deposited at different pressures was calculated, as shown in Fig.…”

Section: Resultsmentioning

confidence: 88%

“…The temperature-dependent field effect data were used to calculate the near conduction band. We observed that the drain current (ID) is thermally activated and can be described by [23,24] …”

Section: Resultsmentioning

confidence: 99%

The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure

2014

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This paper addresses changes in device performance for GeGaInOx (GGIO) thin film transistors deposited as a function of process pressures, and the mechanisms responsible for electronic band structure and defect states within sub-gap states. As the process pressure decreased from 5 to 1 mTorr during sputtering of the GGIO active layer, the saturation mobility increased from 6.51 to 11.18 cm 2 /Vs and the sub-threshold swing value decreased from 0.64 to 0.21 V/ decade. Conduction band areas measured by x-ray absorption spectroscopy in GGIO films increased as the total process pressure decreased from 5 to 1 mTorr, which can help charge transport in GGIO semiconductors. In addition, the ΔVth shift during positive bias temperature stability for 3 h was also enhanced from 17.5 to 6.2 V. This improvement can be attributed to the reduction of relative near conduction band edge defect states, which was found in not only at the GGIO films level by spectral ellipsometry, but also at the device level by the Meyer-Neldel rule.

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The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Cited by 62 publications

References 23 publications

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure

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