The effect of deposition temperature on microstructure and properties of thermal CVD TiN coatings

Wagner, J.; Mitterer, Christian; Penoy, M.; Michotte, C.; Wallgram, Wilfried; Kathrein, M.

doi:10.1016/j.ijrmhm.2007.01.010

Cited by 73 publications

(32 citation statements)

References 25 publications

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“…9. The hardness of TiN is a complex issue and comprises the elemental composition, defects, grain size, residual stress, and texture of the material [35]. The compressive stress in Ti layers decrease as the substrate temperature increases, whereas the tensile stress in TiN layers increases.…”

Section: Structural Analysismentioning

confidence: 99%

Influence of substrate temperature on the materials properties of reactive DC magnetron sputtered Ti/TiN multilayered thin films

Subramanian

Ramadoss

Vidhya

et al. 2011

Materials Science and Engineering: B

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Section: Structural Analysismentioning

confidence: 99%

Influence of substrate temperature on the materials properties of reactive DC magnetron sputtered Ti/TiN multilayered thin films

Subramanian

Ramadoss

Vidhya

et al. 2011

Materials Science and Engineering: B

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“…The growth rate, k, was calculated as described in Biira et al, 2017b). Apparent activation energy, which is a function of reactant concentration and temperature, can be used to determine the rate limiting growth mechanism (Kashani, Sohi and Kaypour, 2000;Wagner, Mitterer and Penoy, 2008). Therefore the two regimes on the Arrhenius plot might be a representation of surface reactions as the limiting mechanism between 1200°C and 1300°C, since apparent activation energy is high, nd mass transport mechanism for the substrate temperatures between 1300°C and 1600°C for the low apparent activation energy of 19.28 kJ/mol.…”

Section: Design and Fabrication Of A Chemical Vapour Deposition Systemmentioning

confidence: 99%

Design and fabrication of a chemical vapour deposition system with special reference to ZrC layer growth characteristics

Biira

Crouse

Bissett

et al. 2017

J. South. Afr. Inst. Min. Metall.

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The overall aim of this research project was to design and construct an inhouse, thermal chemical vapour deposition (CVD) reactor system, operating at atmospheric pressure. Radio frequency (RF) induction heating was used as the energy source, with a vertical-flow design, using thermally stable materials. The steps in the design and construction of this CVD system are described in detail. The growth conditions at different substrate temperatures, gas flow ratios and substrate-gas inlet gaps were assessed as part of the project. The growth rate of ZrC layers increases with increasing substrate temperature. The microstructure properties of the ZrC layers such as lattice parameters and orientation of crystal planes were all found to be dependent on deposition temperature. The increase in free carbon in the as-deposited coatings as the temperature increased was found to be a stumbling block for obtaining stoichiometric ZrC coatings. The surface morphology of the as-deposited ZrC layers also depends on the deposition parameters.ZrC, chemical vapour deposition, RF heating.

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“…23) At present, (100), (111) and (110) are the three main orientations of TiN x films, 24,25) while the (211) orientation has also been obtained by several researchers using TiCl 4 precursor. 1,23,26) The orientation is the result of the competitive growth of differently oriented grains, and therefore the growth rate of grains, particularly those perpendicular to the surface, i.e., the deposition rate, would be closely related to the orientation. 1) In the present study, non-oriented TiN x films were prepared at R dep < 5 mmÁh À1 , whereas the orientation changed to (200) and then (111) orientation with increasing R dep (Fig.…”

Section: Preferred Orientationmentioning

confidence: 99%

“…1,2) In these applications, the control of the composition, microstructure and the preferred orientation is vital to determine the performance and lifetime of the coatings. 3) It is well known that the properties of TiN x films change with grain size, orientation and surface morphology, and that TiN x films with a (111) orientation have higher hardness than the films with a (200) orientation.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Preferred Orientation of Titanium Nitride Films Prepared by Laser CVD

Gong

Goto

2009

Mater. Trans.

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Titanium nitride (TiN x : x ¼ 0:96{1:12) films were prepared by laser chemical vapor deposition (LCVD) using tetrakis-diethylamidetitanium (TDEAT) and ammonia (NH 3 ) as source materials. The effects of deposition conditions, mainly total gas pressure (P tot ), laser power (P L ) and pre-heating temperature (T pre ), on the composition, microstructure and preferred orientation of TiN x films were investigated. The N/Ti ratios (x) in TiN x films decreased with increasing P tot and increased with T pre at P tot < 400 Pa. The preferred orientation significantly depended on the T pre and P L . (111) orientation was obtained at T pre < 673 K and P tot < 600 Pa, whereas (200) orientation appeared at T pre > 673 K and P tot < 600 Pa. The increase in P L caused the change from (200) to (111) orientation. With increasing T pre , the TiN x films changed from a faceted texture with (111) orientation to a square texture with (200) orientation.

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The effect of deposition temperature on microstructure and properties of thermal CVD TiN coatings

Cited by 73 publications

References 25 publications

Influence of substrate temperature on the materials properties of reactive DC magnetron sputtered Ti/TiN multilayered thin films

Influence of substrate temperature on the materials properties of reactive DC magnetron sputtered Ti/TiN multilayered thin films

Design and fabrication of a chemical vapour deposition system with special reference to ZrC layer growth characteristics

Microstructure and Preferred Orientation of Titanium Nitride Films Prepared by Laser CVD

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