The effect of discharge conditions of ICP etching reactor on plasma parameters

Abstract

This study investigated the inductively coupled plasma etching reactor and RF coils developed by North Microelectronic Corporation. Full three dimensional simulations were made at different discharge conditions. The simulations examined and compared the distribution and non-uniformity of several plasma parameters at a fixed position upon the wafer at different pressures and coil currents. These parameters included electron density, electron temperature and power deposition. The results demonstrate that the electron density, power deposition and uniformity increase with either higher pressure or stronger coil currents, while the electron temperature decreases at this condition. Coil number increase can reduce the non-uniformity of parameters in the spatial distribution. The linear relationship between power deposition and electron density does not always exist. The comparison between simulation results and experiment results is also presented in the paper.

Research advances in enhanced coal seam gas extraction by controllable shock wave fracturing

“…It can be seen that the peak pressure of shock wave generated by pulse discharge in water is directly proportional to the density of water and the electrode discharge energy, and is inversely proportional to pulse duration and wave front time. Lu et al (2002) used a high-speed camera and pressure sensor to monitor the pressure characteristics of shock wave during pulse discharge in water. The peak pressure of shock wave is obviously dependent on the discharge voltage and electrode gap.…”