The effect of dose rate on ion implanted impurity profiles in silicon

Tian, Shijie; Yang, Shixuan; Morris, Steven; Parab, K.; Tasch, A.F.; Kamenitsa, D.; Reece, Ronald N.; Freer, B.S.; Simonton, Robert B.; Magee, C. W.

doi:10.1016/0168-583x(95)01280-x

Cited by 12 publications

(6 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can only result from the increase in dose rate. Tian et al 14 have observed small differences in implanted impurity profiles by varying the dose rate of B and As implants in Si from 0.4 to 12 mA. They noted a decrease in channeling with increasing dose rate, in contrast to the effect seen here.…”

Section: Equation ͑1͒contrasting

confidence: 44%

Open-volume defect tails in Ge-implanted Si probed by slow positrons

Knights

Nejim

Coleman

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

Positron annihilation spectroscopy has been used in conjunction with anodic oxidation and etching to profile the distribution of open-volume defects beyond the range of 120 keV Ge ions implanted into (100) Si at a dose of 1×1014 cm−2. For a time-averaged dose rate (Jt) of 0.02 μA/cm−2 and incident angle of 7°, open-volume defects are found to exist at concentrations exceeding 1016 cm−3 at depths up to 600 nm, whereas the peak of the depth distribution of the implanted Ge ions (Rp) is 76 nm, measured using secondary ion mass spectroscopy. An increase in the depth of the defects observed when the implant is intentionally channeled on the 〈100〉 axis is thought to be simply correlated with a corresponding increase in Rp to 79 nm. When the time-averaged current is increased by a factor of 10 (incident angle=7°), defects persist at concentrations in excess of 1017 cm−3 beyond 1 μm and the Rp increases to 101 nm; this extended tail is attributed primarily to increased defect diffusion.

show abstract

Section: Equation ͑1͒contrasting

confidence: 44%

Open-volume defect tails in Ge-implanted Si probed by slow positrons

Knights

Nejim

Coleman

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Among several methods, focused ion beam ͑FIB͒ has found widespread use. Beam characteristics like energy distribution of the ions, 9 presence of beam tails, 10 and variations in beam currents 11 have been the main focus as they contribute greatly to changes in the morphology of nearsurface zones. In all of these cases, an ion beam is focused onto the surface with nominal spot diameters down to the nanometer range, interacting with the atoms or molecules on the sample surface.…”

Section: Introductionmentioning

confidence: 99%

Focused ion beam induced surface amorphization and sputter processes

Basnar¹,

Lugstein²,

Wanzenboeck³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Focused ion beam techniques are among the most important tools for the nanostructuring of surfaces. As the physical phenomena during milling are not fully understood yet, we have applied the phase imaging capabilities of tapping mode atomic force microscopy to the investigation of surface amorphization, sputtering, and redeposition caused by focused ion beam irradiation. We have performed single spot as well as large area (20ϫ20 m 2 ) irradiation of silicon ͑100͒ wafers. We describe the localized formation of amorphous and electrostatically charged domains, which do not correlate to topographic features.

show abstract

“…There are a number of technological parameters and methods which can be varied for this purpose: ion energy 2 and ion dose rate, 3 implantation through dielectric coatings, 4 and metal contacts, [5][6][7] implantation into deposited polysilicon, 8 utilization of the rapid thermal annealing ͑RTA͒ process, 9,10 temperature and time variation in a schedule of a conventional annealing, 11,12 annealing in vacuum, 13 using multiple implant/anneal steps, 14 multiple-species ion implantation [15][16][17] including separate implantation of (In ϩ ϩB ϩ ), 18 (B ϩ ϩF ϩ ), 19 and (F ϩ ϩB ϩ ) ions, 20 etc. All of these techniques are directed at decreasing the thickness of B atoms profile after implantation and annealing: to reducing B ϩ ions projective range in silicon and to suppressing B atoms transient diffusion.…”

Section: Introductionmentioning

confidence: 99%

Harnessing reverse annealing phenomenon for shallow p-n junction formation

Krasnobaev

Cuomo

Vyletalina

1997

Journal of Applied Physics

View full text Add to dashboard Cite

Monocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which peculiarities in carrier concentration, resistivity, and F atoms redistribution occurred. It was reasoned that the “under-surface” specific region is enriched with vacancy-type defects while the “amorphous/crystalline (a/c) interface” region is enriched with interstitial type defects. After annealing at a temperature corresponding to the reverse annealing phenomenon, boron atoms were activated in the “under-surface” and deactivated in the “a/c interface” region. The possibility of PMOS transistor fabrication with ultrashallow p+-n junction (60 nm) and low leakage current by F++B+ implantation and low temperature (600–700) °C annealing by using this phenomenon was demonstrated.

show abstract

The effect of dose rate on ion implanted impurity profiles in silicon

Cited by 12 publications

References 7 publications

Open-volume defect tails in Ge-implanted Si probed by slow positrons

Open-volume defect tails in Ge-implanted Si probed by slow positrons

Focused ion beam induced surface amorphization and sputter processes

Harnessing reverse annealing phenomenon for shallow p-n junction formation

Contact Info

Product

Resources

About