The effect of electric field on metal-insulator phase transition in vanadium dioxide

Борисков, П. П.; Velichko, Andrei; Pergament, A. L.; Стефанович, Г. Б.; Stefanovich, D. G.

doi:10.1134/1.1482750

Cited by 56 publications

(32 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results presented [44], [68], [105] confirm thus the influence of excess electrons on the MIT under the field effect conditions in VO 2 , i.e. the possibility of a transition of vanadium dioxide from a semiconductor state to a metallic state under the action of an electric field and, thereby, the possibility of the VO 2 -based MTFET implementation.…”

Section: Electronic Control Of the Mit At Switchingsupporting

confidence: 67%

“…The field effect upon the MIT in VO 2 has been studied previously, both theoretically and experimentally, in a number of works [99]- [105]. Particularly, a thermodynamic analysis based on the standard phenomenological approach [99], [104], using the equation for the free energy, shows that the shift of the transition temperature in electric field is…”

Section: Electronic Control Of the Mit At Switchingmentioning

confidence: 99%

“…11). The experiments [105] were performed with the structures of two types (A and B). The samples of type A were formed on n-Si substrates with the oxide and nitride layer thicknesses of 60 and 100 nm, respectively.…”

Section: Electronic Control Of the Mit At Switchingmentioning

confidence: 99%

See 2 more Smart Citations

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Pergament¹,

Стефанович²,

Velichko³

2013

Journal on Selected Topics in Nano Electronics and Computing

View full text Add to dashboard Cite

-Metal-oxide-semiconductor field-effect transistors (MOSFET) have been for a long time the key elements of modern electronics industry. For the purpose of a permanent integration enhancement, the size of MOSFET has been decreasing exponentially for over decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are currently designed both in order to sustain an increase of the integration degree, and to improve the functionality and performance of electronic devices. Oxide electronics is one of such promising approaches which could enable and accelerate the development of information and computing technology. The behavior of delectrons in transition metal oxides is responsible for the unique properties of these materials, causing strong electronelectron correlations, which play an important role in the mechanism of metal-insulator transition. The Mott transition in vanadium dioxide is specifically the phenomenon that researchers consider as a corner stone of oxide electronics, particularly, in its special direction known as a Motttransition field-effect transistor (MTFET). This review focuses on current research, latest results, urgent problems and nearterm outlook of oxide electronics with special emphasis on the state of the art and recent progress in the field of VO 2 -based MTFETs.

show abstract

Section: Electronic Control Of the Mit At Switchingsupporting

confidence: 67%

Section: Electronic Control Of the Mit At Switchingmentioning

confidence: 99%

See 1 more Smart Citation

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Pergament¹,

Стефанович²,

Velichko³

2013

Journal on Selected Topics in Nano Electronics and Computing

View full text Add to dashboard Cite

show abstract

“…Over the past five decades, vanadium dioxide (VO 2 ) has been extensively studied in large part due to its semiconducting-to-metal phase transition (SMT) [1], which can be induced thermally [2], optically [3,4], electrically [5,6], or through crystal strain [7]. This sensitivity of VO 2 films and nanoparticles (NPs) to external stimuli and the ability to change the critical temperature through chemical doping [1] has made the material an attractive candidate for the development of "smart" thermal management coatings for windows [8][9][10] and protective coatings for sensors [11,12].…”

Section: Introductionmentioning

confidence: 99%

Plasmonic enhancement of the vanadium dioxide phase transition induced by low-power laser irradiation

et al. 2012

View full text Add to dashboard Cite

Nanocomposites consisting of gold nanoparticle (NP) arrays and vanadium dioxide (VO 2 ) thin films are noteworthy for the tunability of both their thermal and optical properties. The localized surface plasmon resonance (LSPR) of the Au can be tuned when its dielectric environment is modulated by the semiconducting-to-metal phase transition (SMT) of the VO 2 ; the LSPR itself can be altered by changing the shape of the NPs and the pitch of the NP array. In principle, then it should be possible to choose a combination of VO 2 film and Au LSPR properties that maximizes the overall optical response of the nanocomposite. To demonstrate this effect, transient transmission measurements were conducted on lithographically fabricated arrays of Au NPs of diameter 140 nm, array spacing 350 nm, and covered with a 60 nm thick films of VO 2 via pulsed laser deposition. Both Au::VO 2 nanocomposites and bare VO 2 film were irradiated with a shuttered 785 nm pump laser, and their optical response was probed at 1550 nm by a fixed-frequency diode laser. The Au::VO 2 nanocomposite exhibited an increased effective absorption coefficient 1.5 times that of the plain film and required 37 % less laser power to induce the SMT. The time-dependent temperature rise in the film as a function of laser intensity was calculated from these measurements and compared with both analytic and finite-element models. Our results suggest that Au::VO 2 nanocomposites

show abstract

“…These gold contacts are used to measure resistance across the device by applying a voltage (V) referenced to ground and measuring the current (I). To ensure that no significant distortion of the electronic density of states occurred, we applied a small 50 V/cm electric field for our measurements [24]. We approximate the device resistance as V/I from this two-terminal measurement.…”

Section: Setup and Samplementioning

confidence: 99%

X-ray-induced persistent photoconductivity in vanadium dioxide

et al. 2014

View full text Add to dashboard Cite

The resistivity of vanadium dioxide (VO2) decreased by over one-order of magnitude upon localized illumination with x-rays at room temperature. Despite this reduction, the structure remained in the monoclinic phase and had no signature of the high-temperature tetragonal phase that is usually associated with the lower resistance. Once illumination ceased, relaxation to the insulating state took tens of hours near room temperature. However, a full recovery of the insulating state was achieved within minutes by thermal cycling. We show that this behavior is consistent with random local-potential fluctuations and random distribution of discrete recombination sites used to model residual photoconductivity.

show abstract

The effect of electric field on metal-insulator phase transition in vanadium dioxide

Cited by 56 publications

References 3 publications

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Plasmonic enhancement of the vanadium dioxide phase transition induced by low-power laser irradiation

X-ray-induced persistent photoconductivity in vanadium dioxide

Contact Info

Product

Resources

About