The effect of geometry and post-annealing on surface acoustic wave characteristics of AlN thin films prepared by magnetron sputtering

Phan, Duy-Thach; Chung, Gwiy‐Sang

doi:10.1016/j.apsusc.2011.05.050

Cited by 26 publications

(14 citation statements)

References 13 publications

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“…The center frequency of the FBAR is about 2.2 GHz and the insertion loss is about 30 dB. Results showed the devices exhibited excellent performance with the quality factor (Q) about 385 and the effective electromechanical coupling coefficient (k 2 eff ) about 3.4% [12,13]. …”

Section: The Structure Of (002) Oriented Cnc-aln Filmsmentioning

confidence: 77%

High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

et al. 2012

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Abstract:Columnar nanocrystalline aluminum nitride (cnc-AlN) thin films with (002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering. At the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness (RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 eV, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.

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Section: The Structure Of (002) Oriented Cnc-aln Filmsmentioning

confidence: 77%

High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

et al. 2012

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“…The high-quality polycrystalline piezoelectric (002)oriented AlN thin films, with thicknesses (h) of 2 µm, were deposited on (100)-Si wafers by a pulsed reactive magnetron sputtering system [7]. The two-port SAW delay lines based on IDT/AlN/Si, were made by using conventional photolithography technology and wet etching.…”

Section: Methodsmentioning

confidence: 99%

SAW UV sensors using ZnO nanorods grown on AlN/Si structures

Phan

Chung

2011

2011 IEEE SENSORS Proceedings

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In this study, we demonstrate the ZnO nanorods grown on aluminum nitride (AlN)/silicon (Si) layered structure to obtain surface acoustic wave (SAW) UV sensor. The ZnO nanorods act as high UV sensing material due to large surfaceto-volume ratio. The X-ray Diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO nanorods grown on AlN/Si had highly (002)-oriented and good optical properties. The piece of ZnO nannorods grown at center of twoport SAW delay line, which based on inter-digital transducer (IDT)/AlN/Si structure was fabricated and exposed under UV light. Resulting in the SAW UV sensor shifted a maximum of 26 kHz under the UV intensity of 0.6 mW/cm 2 .I.

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“…For each parameter, selected works that investigate its effect will be mentioned. In addition to using the works that were already summarized in Table 2 , i.e., references [ 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 ], we also highlight additional articles that are not included in that table i.e., references [ 63 , 64 , 65 , 66 , 67 , 68 , 69 , …”

Section: Compilation Of Recipes and The Roles Of The Sputtering Pamentioning

confidence: 99%

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Iqbal

Mohd-Yasin

2018

Sensors

161

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We summarize the recipes and describe the role of sputtering parameters in producing highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is collated from the analysis of around 80 journal articles that sputtered this film on variety of substrate materials, processes and equipment. This review will be a good starting point to catch up with the state-of-the-arts research on the reactive sputtering of AlN (002) thin film, as well as its evolving list of piezoelectric applications such as energy harvesters.

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The effect of geometry and post-annealing on surface acoustic wave characteristics of AlN thin films prepared by magnetron sputtering

Cited by 26 publications

References 13 publications

High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

SAW UV sensors using ZnO nanorods grown on AlN/Si structures

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

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