The effect of growth ambient on the structural and optical properties of MgxZn1−xO thin films

Ghosh, Rituparna; Basak, Durga

doi:10.1016/j.apsusc.2009.03.072

Cited by 19 publications

(10 citation statements)

References 36 publications

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“…Because the radius of Mg 2+ is smaller than that of Zn 2+ , when Mg doping concentration is relatively high, it will lead to large lattice distortion in ZnO. The similar phenomena have also been reported by others [18][19][20][21][22][23][24].…”

Section: Structural Propertiessupporting

confidence: 66%

Fabrication and Characterization of Zn1−x Mg x O Films for Photovoltaic Application

Gençyılmaz

Atay

Akyüz

2015

Progress in Clean Energy, Volume 1

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Zn 1Àx Mg x O (ZMO) films were prepared by the ultrasonic spray pyrolysis technique and effects of doping on structural, optical, electrical, and surface properties were examined. The film structures were studied by X-ray diffraction. X-ray diffraction patterns of the films showed that the ZMO films exhibited hexagonal wurtzite crystal structure with a preferred orientation along (0 0 2) direction. Texture coefficient, grain size values, and lattice constants were calculated. The optical properties like transmission, reflection, and absorption were investigated with UV-Vis spectrophotometer. The optical measurements reveal a shift in absorption edge and optical band gap of ZMO films changed with Mg content. Optical parameters (refractive index, extinction coefficient) and thicknesses of the films were investigated by spectroscopic ellipsometry (SE). Surface and electrical properties of the films were studied using atomic force microscopy and four-probe technique, respectively. After all investigations, it is concluded that the ZMO thin films can be used in photovoltaic solar cells as window materials and cell efficiencies can be increased using different content rates.

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Section: Structural Propertiessupporting

confidence: 66%

Fabrication and Characterization of Zn1−x Mg x O Films for Photovoltaic Application

Gençyılmaz

Atay

Akyüz

2015

Progress in Clean Energy, Volume 1

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“…The maximum content of cadmium in the wurtzite Cd x Zn 1-x O is 0.085 from above research reports, while the crystal structure of Cd x Zn 1-x O films grown by Ishihara et al [21] using remote-plasma-enhanced MOVPE changed from wurtzite structure to rocksalt structure around x = 0.7, and the photoluminescence spectra were observed from the wurtzite Cd x Zn 1-x O films in the range of 3.3-1.8 eV with x B 0.69 at room temperature. A ZnO-based TCO with modified band gap gives rise to many of its scientific and technical applications, such as improving the efficiency of different wavelength light emitting devices when used as a transparent electrode [2,13,22]. Matsubara et al [2] synthesized Al-doped Zn 1-x Mg x O transparent conducting films by a PLD system, although film resistivity was found to increase with increasing Mg composition.…”

Section: Introductionmentioning

confidence: 98%

“…While Mg is known to enhance the band gap, Cd substitution leads to reduce in band gap, the resultant (Zn, Cd)O and (Zn, Mg)O alloys have allowed to cover a wide band gap range [10][11][12]. Actually, the thermodynamic solubility limits of MgO and CdO in MgO-ZnO and CdO-ZnO alloy systems are only about 4% [13] and 2% [10], respectively. In spite of the predicted low solubility, Ohtomo et al [14] prepared solid solution Mg x Zn 1-x O films with Mg content up to a value of x = 0.33 by pulsed laser deposition (PLD) under metastable conditions.…”

Section: Introductionmentioning

confidence: 99%

Band gap modified Al-doped Zn1−x Mg x O and Zn1−y Cd y O transparent conducting thin films

Duan

Zhao

Liu

et al. 2011

J Mater Sci: Mater Electron

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Al-doped Zn 1-x Mg x O and Zn 1-y Cd y O thin films were prepared on glass substrates by sol-gel method. The codoping thin films showed preferential c-axis orientation, and the lattice constant c evaluated from the shift of the position of (002) peak displayed an increasing evolution from x = 8 at.% to y = 8 at.%, indicating a roughly statistical substitution of Mg 2? and Cd 2? for Zn 2? in their solid solution. The effects of narrowing and widening band gap (E g ) on conductivity of (Cd, Al) and (Mg, Al) codoped ZnO thin films were simultaneously investigated using transmission spectra and electrical measurements. The transmittances of these films are obviously decreased by vacuum annealing to 50-60%. However, the carrier concentration and Hall mobility both increase, and resistivity decreases with narrowing band gap in 1 at.% Al-doped Zn 1-x Mg x O and Zn 1-y Cd y O thin films from x = 8 at.% to y = 8 at.%. It is revealed that the conductivity of Al-doped ZnO thin films could be enhanced by this simple band gap modification.

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“…Although Cd substitution narrows the bandgap, Mg substitution widens it. 3,4 Heterojunction fabrication is the key technique for confining both electrons and photons in order to obtain high-performance LED devices. ZnO can be alloyed with MgO to form such heterojunctions because the bandgap energies of MgZnO (MZO) thin films, ranging from 3.3 to 4.5 eV, can be successively tuned by varying the Mg composition.…”

Section: Introductionmentioning

confidence: 99%

Improvement of the Crystallinity of MgZnO with a Zn Buffer Layer by Sol–Gel Spin‐coating Method

Kim

et al. 2015

Bulletin Korean Chem Soc

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We fabricate magnesium zinc oxide (MZO) thin films inserting a buffer layer between a film and a substrate with different annealing temperatures. The structural and optical properties of MZO thin films are investigated by using scanning electron microscopy, X-ray diffraction (XRD), and photoluminescence. The XRD patterns for the buffer layers annealed at 200 C show the narrowest full width at half maximum and the most intense (0 0 2) diffraction peak. In addition, the buffer layers decrease the magnitude of the residual stress between the MZO thin film and the silicon substrate. The near-band-edge emission peaks intensify and the deep-level emission peaks significantly intensify with increasing buffer layer annealing temperatures. Inserting a buffer layer between a film and a substrate improves the crystallinity of MZO thin films.

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The effect of growth ambient on the structural and optical properties of MgxZn1−xO thin films

Cited by 19 publications

References 36 publications

Fabrication and Characterization of Zn1−x Mg x O Films for Photovoltaic Application

Fabrication and Characterization of Zn1−x Mg x O Films for Photovoltaic Application

Band gap modified Al-doped Zn1−x Mg x O and Zn1−y Cd y O transparent conducting thin films

Improvement of the Crystallinity of MgZnO with a Zn Buffer Layer by Sol–Gel Spin‐coating Method

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