The effect of heat treatment on compensated CZ silicon

Баранский, П. И.; Babich, V. M.; Baran, N. P.; Bugay, A. A.; Dotsenko, Yu. P.; Kovalchuk, V. B.

doi:10.1002/pssa.2210820225

Cited by 7 publications

(3 citation statements)

References 4 publications

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“…To identify TD-centers and establish nature of DTDs which were detected in the samples p-Si(B) thermally treated at 450°C, the several adequate methods such as the Hall effect, ESR and low temperature photoluminescence were applied [5,7,8]. Let us remind two important results of these studies.…”

Section: Resultsmentioning

confidence: 99%

“…The relative error for MS measurements did not exceed 1 %. The Hall effect was studied in the initial and thermallytreated samples within the temperature range of 20 up to 450 K. In order to explain the MS results obtained, the experimental data more early published in [5,7,8] on the ESR spectra in the temperature range of 20-50 K and low temperature (at 4.2 K) photoluminescence for the investigated samples thermally annealed at 450 °C were used in this work.…”

Section: Methodsmentioning

confidence: 99%

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Magnetic susceptibility of p-Si(B) single crystals grown in “vacancy” regime at presence of thermodonors created by thermal treatments at 450 °C

Babych¹

2008

Semicond. phys. quantum electron. optoelectron.

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By using the Faraday method and complex of electro-physical studies (Hall effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in "vacancy" regime and annealed at 450 °C are studied. It is demonstrated that the presence of deep thermodonors with the ionization energy Е і ≥ 200 meV in these samples contributes to the appearance of a paramagnetic constituent with the magnetic susceptibility (χ par ) even at 300 K. χ par in this material does not depend on temperature in the range of 77 -300 K that can testify on the Van-Fleck origin of this magnetic susceptibility component. Absence of nonlinearities in the dependence χ(H) within the interval 0.3-4 kOe shows uncooperative character of magnetism found out.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Magnetic susceptibility of p-Si(B) single crystals grown in “vacancy” regime at presence of thermodonors created by thermal treatments at 450 °C

Babych¹

2008

Semicond. phys. quantum electron. optoelectron.

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“…And these studies have been still far from completed. For a long time the thermodonors have been actively studied using different techniques: the Hall effect [10,[14][15][16], the electron paramagnetic resonance (EPR) [7,17,18], deep level transient spectroscopy (DLTS) [19][20][21], infrared spectroscopy [22,23], photoluminescence [15] and others. However, despite the large number of studies [24], up to date an exact model of the donor center, which could describe all the existing experimental data, has not been developed.…”

Section: Introductionmentioning

confidence: 99%

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

Баранский¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Investigated in this work were changes in the concentration of charge carriers n e and their mobilities , which occur under the influence of thermoannealing of Si n  and Ge n  crystals grown by the Czochralski method. Thermoannealing of Si n  samples was carried out both at 450°C and 650°C. The results of the influence of twostage (combined) thermoannealing have been presented. In the first series of experiments, the annealing was performed at 450°C with varied duration (from 5 to 45 h) at the beginning, and then it was carried out for 40 hours at 650°C. The second series of experiments was as follows: the annealing at 450°C for 45-hour duration, then the annealing at 650°C, which was carried out for various periods of time (5, 10, 20, 45, 66 hours). The observations for changes of n e and  were carried out both at the temperature 300 and 77 K. It is ascertained that changing the main parameters (n e and ) in As Ge n  heavily doped single crystals, as a result of the series of thermoannealings (duration 30 min in each case) within the temperature range from 540 to 900°C, is non-monotonous due to transformation of the thermodonors I TD  into II TD  .

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Specific features of piezogalvanomagnetic effects in oxygen-containing silicon crystals in the presence of thermal donors-I and -II

Babich

Baran

Borblik

et al. 1984

Phys. Stat. Sol. (a)

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Quantitative changes of the thermal ionization energy of thermal donor levels depending on the mechanical stress magnitude in a sample are determined both for thermal donors‐I (heat treatment 450 °C) and for thermal donors‐II (heat treatment 650 °C) by means of piezogalvanomagnetic effects in oxygen‐containing p‐Si crystals recompensated by thermal donors into the n‐type. Different nature of ionization energy changes is established for levels ϵ1 ≈ 0.064 and ϵ2 ≈ 0.14 eV in the double‐charged thermal donors‐I. All the experimental data indicate that the dependence of the thermal donor level position on the pressure is affected also by the nature of the centre.

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The effect of heat treatment on compensated CZ silicon

Abstract: Thermally induced donors in Czochralski‐grown p‐Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed.

Cited by 7 publications

References 4 publications

Magnetic susceptibility of p-Si(B) single crystals grown in “vacancy” regime at presence of thermodonors created by thermal treatments at 450 °C

Magnetic susceptibility of p-Si(B) single crystals grown in “vacancy” regime at presence of thermodonors created by thermal treatments at 450 °C

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

Specific features of piezogalvanomagnetic effects in oxygen-containing silicon crystals in the presence of thermal donors-I and -II

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