The effect of implantation temperature on the surface hardness, elastic modulus and Raman scattering in amorphous carbon

Abstract

Nitrogen implantation into amorphous carbon has been studied at various implantation temperatures by using 100 keV N ϩ at 5 A and fluences of 2ϫ10 17 ions/cm 2 . The apparent surface hardness and elastic modulus from nanoindentation are well correlated with an asymmetric diffuse peak at around 1500 cm Ϫ1 and a broad band at ϳ700 cm Ϫ1 in the Raman spectra. Both the enhanced strengths and Raman characteristics show very weak Arrhenius-type implantation-temperature dependence with activation enthalpies of approximately 20 meV in the temperature range 223Ϫ1073 K.

Carbon nitride films synthesized by the reactive ionized cluster beam technique

“…It is interesting to note that these spectra are quite different from the spectra of amorphous carbon films incorporating nitrogen prepared by ion implantation [7] and other methods [9,10]. There is a distinct peak centred at about 1248 cm −1 in these spectra.…”

“…The synthesis of these theoretically predicted substances has been the subject of many recent investigations. Until now, a variety of techniques, including laser ablation [4], microwave plasma CVD [5], shock wave compression [6], ion implantation [7], reactive RF sputtering [8], low-energy ion beam deposition [9] and plasma decomposition methods [10] have been used to fabricate carbon nitride thin films. Rather high hardness and good wear-resistance properties [11] of these films have been measured, which will lead to their possible use in applications such as coating materials.…”

Study of the conductivity of nitrogen doped tetrahedral amorphous carbon films

“…taC:N films have been deposited by various chemical and physical vapor deposition techniques such as filament-assisted chemical vapor deposition, pulse laser depositon, microwave plasma-assisted deposition, mass-selected ion beam deposition and filtered cathodic vacuum arc (FCVA) [11][12][13][14][15]. The last method has been proved to be a promising method for the deposition of high quality taC films on different substrate materials at room temperature [16].…”

Effect of deposition pressure on microstructure and properties of hydrogenated carbon nitride films prepared by DC-RF-PECVD

“…Although serious problems have emerged during production of the predicted crystalline phase, amorphous carbon nitride (a-CN x ) films also exhibit many attractive properties such as high wear resistance, low friction coefficient, and good chemical inertness, which have further stimulated the research into carbon nitride films. Not surprisingly, many efforts have been made worldwide to synthesize the various carbon nitride films by different experimental methods, e.g., reactive sputtering [4][5][6][7], ion beam deposition [8][9][10][11], plasma chemical vapor deposition (CVD) [12][13][14], ion implantation [15,16], cathode vacuum arc [17,18] and laser ablation [19,20], etc.…”