2005
DOI: 10.1016/j.jnoncrysol.2005.10.013
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Effect of deposition pressure on microstructure and properties of hydrogenated carbon nitride films prepared by DC-RF-PECVD

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Cited by 23 publications
(10 citation statements)
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“…Besides, other deposition conditions are also important such as RF power, DC bias and total working pressure. The effect of total working pressure on the structure and properties of the a-CN:H films has been reported in our previous work [21]. The details of RF power and DC bias will be dealt with elsewhere.…”
Section: Discussionmentioning
confidence: 84%
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“…Besides, other deposition conditions are also important such as RF power, DC bias and total working pressure. The effect of total working pressure on the structure and properties of the a-CN:H films has been reported in our previous work [21]. The details of RF power and DC bias will be dealt with elsewhere.…”
Section: Discussionmentioning
confidence: 84%
“…With increasing the N 2 /CH 4 flow ratio, the more nitrogen atoms substitute for carbon sites, which results in the increase of the graphite-like sp 2 the higher N 2 flow, the intense nitrogen ion sputtering at growing film surfaces makes the films looser. Besides, the change of the hardness of the deposited films is relate to the hydrogen content inside the a-CN:H films [21]. In the experiment, the substrate was not heated, and there exists hydrogen inside the films, so the deposited films became softer with increasing N 2 /CH 4 flow ratio, that is another reason for the films changing softer.…”
Section: Resultsmentioning
confidence: 99%
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“…For the samples prepared at mixed CH 4 and N 2 gas atmosphere, the N 1s peak could be reconstructed by three peaks at 400.2 eV, 398.6 eV, and 396.2 eV. The binding energy of 398.6 eV and 400.2 eV is attributed to nitrogen atoms bonded sp 3 C (sp 3 C-N) and sp 2 C (sp 2 C-N) atoms [22], but the difference will not be discussed here. We consider these two binding energies as C-N bonding state.…”
Section: Resultsmentioning
confidence: 99%
“…Pecahan ikatan sp 3 C berkurang apabila kuasa RF bertambah. Hal ini adalah disebabkan rangkaian C-C berubah daripada sp 3 C-C kepada sp 2 C -C seperti yang dinyatakan oleh Robertson (1997 (Hao et al 2005). Maka, berlaku peningkatan kadar pemendapan.…”
Section: Kaedah Uji Kajiunclassified