The Effect of Low-Temperature Annealing on a CdZnTe Detector

Kim, K. H.; Hwang, Seongpil; Fochuk, P.M.; Nasi, L.; Zappettini, A.; Bolotnikov, A. E.; James, R. B.

doi:10.1109/tns.2016.2583546

Cited by 14 publications

(11 citation statements)

References 11 publications

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“…This compound has a structure of sphalerite (zinc blende) with 0≤x≤0.7 [3]. Cd 1-x Zn x Te has long been known to have great potential in room-temperature X-ray and gamma ray semiconductor detector applications [4]. Therefore, it is of a great interest to try to combine both semiconductors by growth diluted magnetic semiconductors Cd 1-x-y Mn x Zn y Te.…”

Section: Introductionmentioning

confidence: 99%

Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

Kopach

Shcherbak

et al. 2017

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX

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Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots Notice: This manuscript has been authored by employees of Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH10886 with the U.S. Department of Energy. The publisher by accepting the manuscript for publication acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Vertical Bridgman growth and characterization of Cd 0.95-x Mn x Zn 0.05 Te (x=0.20, 0.30) single-crystal ingots

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Section: Introductionmentioning

confidence: 99%

Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

Kopach

Shcherbak

et al. 2017

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX

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“…% resulted in an increase in the band-gap Eg from 1.77 to 1.88 eV. However, the electrical resistivity for CMZT-1 sample was 2x10 5 Ohm-cm, and for CMZT-2 sample it was found to be only 5x10 4 Ohm-cm, indicating the need for a compensating dopant for use of the material as an X-ray or gamma-ray detector.…”

Section: Discussionmentioning

confidence: 98%

“…where R is the resistance of the sample, S the contact area, and l is the thickness. The electrical resistivity ρ obtained from the I-V curves was 2x10 5 Ohm-cm for CMZT-1 and 5x10 4 Ohm-cm for CMZT-2. These values mean that the sputtered Au film can form a good ohmic contact to Cd(Mn,Zn)Te crystal, but the resistivity value needs to be improved by doping with compensating elements, e.g.…”

Section: Optical and Electrical Propertiesmentioning

confidence: 94%

“…This compound has a structure of sphalerite (zinc blende) with 0≤x≤0.7 [3]. Cd1-xZnxTe has long been known to have great potential in room-temperature X-ray and gamma-ray semiconductor detector applications [4]. Therefore, it is of a great interest to try to combine both semiconductors by growth of the diluted magnetic semiconductor Cd1-x-yMnxZnyTe.…”

Section: Introductionmentioning

confidence: 99%

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Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

Kopach

et al. 2017

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Solid-liquid phase transitions in Cd0.95-xMnxZn0.05Te alloys with x = 0.20 and 0.30 were investigated by differential thermal analysis (DTA). The heating/cooling rates were 5 and 10 K/min with a melt dwell time of 10, 30 and 60 minutes. Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots were grown by the vertical Bridgman method guided by the DTA results.Te inclusions (1-20 micron diameter), typical of melt-grown CdTe and Cd(Zn)Te crystals, were observed in the ingots by infrared transmission microscopy. The measured X-ray diffraction patterns showed that all compositions are found to be in a single phase. Using current-voltage (I-V) measurements, the resistivity of the samples from each ingot was estimated to be about 10 5 Ohm•cm. The optical transmission analysis demonstrated that the band-gap of the investigated ingots increased from 1.77 to 1.88 eV with an increase of the MnTe content from 20 to 30 mol. %.

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“…CdTe-based detectors can be annealed in different atmospheres to improve the electrical and spectroscopic properties. Low-temperature annealing is typically performed on CdTe-based materials in the temperature range of 370–520 K. Studies investigating the influence of low-temperature annealing on CdTe/CdZnTe material have reported controversial results [ 11 , 12 , 13 , 14 , 15 ]. However, these studies were performed on samples with planar electrodes, which do not allow the investigators to distinguish between bulk and surface leakage currents.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Annealing of CdZnTeSe under Bias

Rejhon

Dědič

Grill

et al. 2021

Sensors

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We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector’s resistance and space-charge accumulation. This could potentially lead to the control and improvement of the electronic properties of the detector because the changes are accompanied with the reduction in the bulk dark current and surface leakage current. In this article, we present the results of a detailed study of the internal electric field and conductivity changes in CdZnTeSe detector for various annealing steps under bias taking into account different polarities during annealing and subsequent characterization. We observed that low-temperature annealing results in an increase in the barrier height at the contacts that, in general, reduces the dark current and decreases the positive space charge present in the sample compared to the pre-annealed condition.

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The Effect of Low-Temperature Annealing on a CdZnTe Detector

Cited by 14 publications

References 11 publications

Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

Vertical Bridgman growth and characterization of Cd<sub>0.95-x</sub>Mn<sub>x</sub>Zn<sub>0.05</sub>Te (x=0.20, 0.30) single-crystal ingots

Low-Temperature Annealing of CdZnTeSe under Bias

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